参数资料
型号: IDT70V9369L7PFI
厂商: IDT, Integrated Device Technology Inc
文件页数: 5/16页
文件大小: 0K
描述: IC SRAM 288KBIT 7NS 100TQFP
标准包装: 90
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,同步
存储容量: 288K(16K x 18)
速度: 7ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 100-LQFP
供应商设备封装: 100-TQFP(14x14)
包装: 托盘
其它名称: 70V9369L7PFI
IDT70V9369L
High-Speed 3.3V 16K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (V DD = 3.3V ± 0.3V)
70V9369L
Symbol
|I LI |
|I LO |
V OL
V OH
Parameter
Input Leakage Current (1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V DD = 3.6V, V IN = 0V to V DD
CE O = V IH or CE 1 = V IL , V OUT = 0V to V DD
I OL = +4mA
I OH = -4mA
Min.
___
___
___
2.4
Max.
5
5
0.4
___
Unit
μA
μA
V
V
NOTE:
1. At V DD < 2.0V input leakages are undefined.
DC Electrical Characteristics Over the Operating
Temperature Supply Voltage Range (3) (V DD = 3.3V ± 0.3V)
5648 tbl 08
70V9369L6
Com'l Only
70V9369L7
Com'l
70V9369L9
Com'l Only
70V9369L12
Com'l Only
& Ind
Symbol
Parameter
Test Condition
Version
Typ. (4)
Max.
Typ. (4)
Max.
Typ. (4)
Max.
Typ. (4)
Max.
Unit
I DD
I SB1
Dynamic Operating
Current (Both
Ports Active)
Standby Current
CE L and CE R = V IL ,
Outputs Disabled,
f = f MAX (1)
CE L = CE R = V IH
COM'L
IND
COM'L
L
L
L
220
____
70
350
____
130
200
200
65
290
335
100
180
____
50
225
____
65
150
____
40
205
____
50
mA
mA
(Both Ports - TTL
f = f MAX
Level Inputs)
(1)
IND
L
____
____
65
115
____
____
____
____
I SB2
I SB3
I SB4
Standby
Current (One
Port - TTL
Level Inputs)
Full Standby
Current (Both
Ports - CMOS
Level Inputs)
Full Standby
Current (One
CE "A" = V IL and
CE "B" = V IH (5)
Active Port Outputs
Disabled, f=f MAX (1)
Both Ports CE L and
CE R > V DD - 0.2V,
V IN > V DD - 0.2V or
V IN < 0.2V, f = 0 (2)
CE "A" < 0.2V and
CE "B" > V DD - 0.2V (5)
COM'L
IND
COM'L
IND
COM'L
L
L
L
L
L
150
____
0.4
____
140
250
____
5
____
240
140
140
0.4
0.4
130
210
240
5
15
200
110
____
0.4
____
100
150
____
5
____
140
100
____
0.4
____
90
140
____
5
____
130
mA
mA
mA
Port - CMOS
V IN > V DD - 0.2V or
IND
L
Outputs Disabled, f = f MAX
Level Inputs)
V IN < 0.2V, Active Port,
(1)
____
____
130
230
____
____
____
____
5648 tbl 09
NOTES:
1. At f = f MAX , address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/t CYC , using "AC TEST CONDITIONS" at input
levels of GND to 3V.
2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
4. V DD = 3.3V, T A = 25°C for Typ, and are not production tested. I DD DC (f=0) = 90mA (Typ).
5. CE X = V IL means CE 0X = V IL and CE 1X = V IH
CE X = V IH means CE 0X = V IH or CE 1X = V IL
CE X < 0.2V means CE 0X < 0.2V and CE 1X > V DD - 0.2V
CE X > V DD - 0.2V means CE 0X > V DD - 0.2V or CE 1X < 0.2V
"X" represents "L" for left port or "R" for right port.
5
6.42
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