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| 型号： | IDT70V9389L6PRF |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 7/19页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 1.125MBIT 6NS 128TQFP |
| 标准包装： | 6 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，同步 |
| 存储容量： | 1.125M（64K x 18） |
| 速度： | 6ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 128-LQFP |
| 供应商设备封装： | 128-TQFP（14x20） |
| 包装： | 托盘 |
| 其它名称： | 70V9389L6PRF |
IDT70V9389/289L
High-Speed 3.3V 64K x18/x16 Dual-Port Synchronous Pipelined Static RAM
Truth Table II—Address Counter Control (1,2)
Industrial & Commercial Temperature Ranges
External
Address
X
An
An
X
Previous
Internal
Address
X
X
Ap
Ap
Internal
Address
Used
0
An
Ap
Ap + 1
CLK
↑
↑
↑
↑
ADS
X
L (4)
H
H
CNTEN
X
X
H
L (5)
CNTRST
L (4)
H
H
H
I/O (3)
D I/O (0)
D I/O (n)
D I/O (p)
D I/O (p+1)
MODE
Counter Reset to Address 0
External Address Loaded into Counter
External Address Blocked —Counter disabled (Ap reused)
Counter Enabled —Internal Address generation
NOTES:
1. "H" = V IH, "L" = V IL, "X" = Don't Care.
2. CE 0 , LB , UB , and OE = V IL ; CE 1 and R/ W = V IH .
3. Outputs configured in Flow-Through Output mode; if outputs are in Pipelined mode the data out will be delayed by one cycle.
4. ADS and CNTRST are independent of all other signals including CE 0 , CE 1 , UB and LB .
5. The address counter advances if CNTEN = V IL on the rising edge of CLK, regardless of all other signals including CE 0 , CE 1 , UB and LB .
4856 tbl 03
Recommended Operating
Temperature and Supply Voltage (1)
Recommended DC Operating
Conditions
Grade
Commercial
Industrial
Ambient
Temperature (2)
0 O C to +70 O C
-40 O C to +85 O C
GND
0V
0V
V DD
3.3V + 0.3V
3.3V + 0.3V
Symbol
V DD
V SS
V IH
Parameter
Supply Voltage
Ground
Input High Voltage
Min.
3.0
0
2.0
Typ.
3.3
0
____
Max.
3.6
0
V DD +0.3V
(2)
Unit
V
V
V
NOTE:
1. This is the parameter T A . This is the "instant on" case temperature.
4856 tbl 04
V IL
NOTES:
Input Low Voltage
-0.3
(1)
____
0.8
V
4856 tbl 05
1. V IL > -1.5V for pulse width less than 10 ns.
2. V TERM must not exceed V DD +0.3V.
Absolute Maximum Ratings (1)
Symbol Rating Commercial
& Industrial
V TERM (2) Terminal Voltage -0.5 to +4.6
with Respect to
GND
Unit
V
Capacitance (1)
(T A = +25°C, f = 1.0MH Z )
Symbol Parameter
C IN Input Capacitance
Conditions (2)
V IN = 3dV
Max.
9
Unit
pF
C OUT
T BIAS (3)
Temperature
Under Bias
-55 to +125
o
C
(3)
Output Capacitance
V OUT = 3dV
10
pF
T STG
Storage
Temperature
-65 to +150
o
C
4856 tbl 07
NOTES:
1. These parameters are determined by device characterization, but are not
C
T JN
I OUT
NOTES:
Junction Temperature
DC Output Current
+150
50
o
mA
4856 tbl 06
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from 0V to 3V or from 3V to 0V.
3. C OUT also references C I/O .
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V TERM must not exceed V DD +0.3V for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V TERM > V DD + 0.3V.
3. Ambient Temperature Under DC Bias. No AC Conditions. Chip Deselected.
7
6.42
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