参数资料
型号: IDT72V3622L10PF8
厂商: IDT, Integrated Device Technology Inc
文件页数: 18/29页
文件大小: 0K
描述: IC BIFIFO 256X36X2 10NS 120-TQFP
标准包装: 750
系列: 72V
功能: 异步,同步
存储容量: 18.4K(256 x 36 x 2)
数据速率: 100MHz
访问时间: 10ns
电源电压: 3 V ~ 3.6 V
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 120-LQFP
供应商设备封装: 120-TQFP(14x14)
包装: 带卷 (TR)
其它名称: 72V3622L10PF8
25
COMMERCIAL TEMPERATURERANGE
IDT72V3622/72V3632/72V3642 CMOS 3.3V SyncBiFIFOTM
256 x 36 x 2, 512 x 36 x 2, 1,024 x 36 x 2
NOTES:
1. tSKEW2 is the minimum time between a rising CLKB edge and a rising CLKA edge for AEA to transition HIGH in the next CLKA cycle. If the time between the rising CLKB edge and rising
CLKA edge is less than tSKEW2, then AEA may transition HIGH one CLKA cycle later than shown.
2. FIFO2 Write (CSB = LOW, W/RB = LOW, MBB = LOW), FIFO2 read (CSA = LOW, W/RA = LOW, MBA = LOW). Data in the FIFO2 output register has been read from the FIFO.
Figure 17. Timing for AEA
AEA
AEA when FIFO2 is Almost-Empty (IDT Standard and FWFT Modes)
NOTES:
1. tSKEW2 is the minimum time between a rising CLKA edge and a rising CLKB edge for AFA to transition HIGH in the next CLKA cycle. If the time between the rising CLKA edge and rising
CLKB edge is less than tSKEW2, then AFA may transition HIGH one CLKA cycle later than shown.
2. FIFO1 Write (CSA = LOW, W/RA = HIGH, MBA = LOW), FIFO1 read (CSB = LOW, W/RB = HIGH, MBB = LOW). Data in the FIFO1 output register has been read from the FIFO.
3. D = Maximum FIFO Depth = 256 for the IDT72V3622, 512 for the IDT72V3632, 1,024 for the IDT72V3642.
Figure 18. Timing for AFA
AFA
AFA when FIFO1 is Almost-Full (IDT Standard and FWFT Modes)
AEA
CLKB
ENA
4660 drw 19
ENB
CLKA
2
1
tENS2
tENH
tSKEW2
tPAE
tENS2
tENH
(X2+1) Words in FIFO2
X2 Words in FIFO2
(1)
AFA
CLKA
ENB
4660 drw 20
ENA
CLKB
12
tSKEW2
tENS2
tENH
tPAF
tENS2
tENH
tPAF
[D-(Y1+1)] Words in FIFO1
(D-Y1) Words in FIFO1
(1)
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