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参数资料
| 型号： | IPB051NE8NG |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢2 Power-Transistor |
| 中文描述： | 的OptiMOS㈢2功率晶体管 |
| 文件页数： | 2/11页 |
| 文件大小： | 473K |
| 代理商： | IPB051NE8NG |
IPB051NE8N G IPI05CNE8N G
IPP054NE8N G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
0.5
K/W
Thermal resistance,
R
thJA
minimal footprint
-
-
62
junction - ambient
6 cm
2
cooling area
5)
-
-
40
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
85
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=
V
GS
,
I
D
=250 μA
2
3
4
Zero gate voltage drain current
I
DSS
V
DS
=68 V,
V
GS
=0 V,
T
j
=25 °C
-
0.1
1
μA
V
DS
=68 V,
V
GS
=0 V,
T
j
=125 °C
-
10
100
Gate-source leakage current
I
GSS
V
GS
=20 V,
V
DS
=0 V
-
1
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V,
I
D
=100 A,
TO220, TO262
-
4.1
5.4
m
V
GS
=10 V,
I
D
=100 A,
TO263
-
3.8
5.1
Gate resistance
R
G
-
1.8
-
Transconductance
g
fs
|
V
DS
|>2|
I
D
|
R
DS(on)max
,
I
D
=100 A
81
162
-
S
1)
J-STD20 and JESD22
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 μm thick) copper area for drain
connection. PCB is vertical in still air.
Values
4)
T
jmax
=150 °C and duty cycle D=0.01 for V
gs
<-5V
2)
Current is limited by bondwire; with an
R
thJC
=0.5 K/W the chip is able to carry 161 A.
3)
See figure 3
Rev. 1.04
page 2
2006-02-17
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IPB051NE8NG_10 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS?2 Power-Transistor Features N-channel, normal level 175 °C operating temperature |
| IPB051NE8NGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 85V 100A 3-Pin(2+Tab) TO-263 |
| IPB052N04N G | 功能描述:MOSFET OptiMOS 3 PWR TRANST 40V 70A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB052N04NG | 制造商:Rochester Electronics LLC 功能描述: 制造商:Infineon Technologies AG 功能描述: |
| IPB052N04NGATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 40V 70A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 40V 70A TO263-3 |
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