参数资料
型号: IPB051NE8NG
厂商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS㈢2 Power-Transistor
中文描述: 的OptiMOS㈢2功率晶体管
文件页数: 3/11页
文件大小: 473K
代理商: IPB051NE8NG
IPB051NE8N G IPI05CNE8N G
IPP054NE8N G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
9090
12100 pF
Output capacitance
C
oss
-
1710
2270
Reverse transfer capacitance
C
rss
-
120
180
Turn-on delay time
t
d(on)
-
28
42
ns
Rise time
t
r
-
42
61
Turn-off delay time
t
d(off)
-
64
96
Fall time
t
f
-
21
31
Gate Charge Characteristics
6)
Gate to source charge
Q
gs
-
47
62
nC
Gate to drain charge
Q
gd
-
31
46
Switching charge
Q
sw
-
50
72
Gate charge total
Q
g
-
135
180
Gate plateau voltage
V
plateau
-
5.1
-
V
Output charge
Q
oss
V
DD
=40 V,
V
GS
=0 V
-
130
173
nC
Reverse Diode
Diode continous forward current
I
S
-
-
100
A
Diode pulse current
I
S,pulse
-
-
400
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=100 A,
T
j
=25 °C
-
1.0
1.2
V
Reverse recovery time
t
rr
-
110
-
ns
Reverse recovery charge
Q
rr
-
345
-
nC
6)
See figure 16 for gate charge parameter definition
V
R
=40 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/μs
T
C
=25 °C
Values
V
GS
=0 V,
V
DS
=40 V,
f
=1 MHz
V
DD
=40 V,
V
GS
=10 V,
I
D
=50 A,
R
G
=1.6
V
DD
=40 V,
I
D
=100 A,
V
GS
=0 to 10 V
Rev. 1.04
page 3
2006-02-17
相关PDF资料
PDF描述
IPI05CNE8NG OptiMOS㈢2 Power-Transistor
IPB05CN10NG OptiMOS㈢2 Power-Transistor
IPI05CN10NG OptiMOS㈢2 Power-Transistor
IPB05N03LAG OptiMOS㈢2 Power-Transistor
IPB05N03LB OptiMOS㈢2 Power-Transistor
相关代理商/技术参数
参数描述
IPB051NE8NG_10 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS?2 Power-Transistor Features N-channel, normal level 175 °C operating temperature
IPB051NE8NGXT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 85V 100A 3-Pin(2+Tab) TO-263
IPB052N04N G 功能描述:MOSFET OptiMOS 3 PWR TRANST 40V 70A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IPB052N04NG 制造商:Rochester Electronics LLC 功能描述: 制造商:Infineon Technologies AG 功能描述:
IPB052N04NGATMA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 40V 70A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 40V 70A TO263-3