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参数资料
| 型号： | IPB26CNE8NG |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢2 Power-Transistor |
| 中文描述： | 的OptiMOS㈢2功率晶体管 |
| 文件页数： | 2/13页 |
| 文件大小： | 658K |
| 代理商： | IPB26CNE8NG |
IPB26CNE8N G IPD25CNE8N G
IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
2.1
K/W
R
thJA
minimal footprint
-
-
62
6 cm2 cooling area
4)
-
-
40
minimal footprint
-
-
75
6 cm2 cooling area
4)
-
-
50
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
85
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=
V
GS
,
I
D
=39 μA
2
3
4
Zero gate voltage drain current
I
DSS
V
DS
=68 V,
V
GS
=0 V,
T
j
=25 °C
-
0.1
1
μA
V
DS
=68 V,
V
GS
=0 V,
T
j
=125 °C
-
10
100
Gate-source leakage current
I
GSS
V
GS
=20 V,
V
DS
=0 V
-
1
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V,
I
D
=35 A,
(TO252)
-
19
25
m
V
GS
=10 V,
I
D
=35 A,
(TO251)
-
19
25
V
GS
=10 V,
I
D
=35 A,
(TO263)
-
20
26
V
GS
=10 V,
I
D
=35 A,
(TO220, TO262)
-
20
26
Gate resistance
R
G
-
1.1
-
Transconductance
g
fs
|
V
DS
|>2|
I
D
|
R
DS(on)max
,
I
D
=35 A
19
38
-
S
Values
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 μm thick) copper area for drain
connection. PCB is vertical in still air.
Thermal resistance, junction -
ambient (TO220, TO262, TO263)
Thermal resistance, junction -
ambient (TO252, TO251)
Rev. 1.0
page 2
2006-02-17
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| IPB320N20N3 G | 功能描述:MOSFET N-channel POWER MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB320N20N3G | 制造商:Infineon Technologies AG 功能描述:MOSFET N-Channel 200V 34A OptiMOS3 TO263 制造商:Infineon Technologies 功能描述:Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) TO-263 |
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| IPB320N20N3GATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:N-KANAL POWER MOS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:N-KANAL POWER MOS - Cut TR (SOS) 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 200V 34A TO263-3 |
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