参数资料
型号: IPB80N06S3L-06
厂商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS㈢-T Power-Transistor
中文描述: ㈢的OptiMOS - T的功率晶体管
文件页数: 1/8页
文件大小: 163K
代理商: IPB80N06S3L-06
IPB80N06S3L-06
IPI80N06S3L-06, IPP80N06S3L-06
Opti
MOS
-T
Power-Transistor
Features
N-channel - Logic Level - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
100% Avalanche tested
ESD Class 2 (HBM)
EIA/JESD22-A114-B
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Unit
Continuous drain current
1)
I
D
T
C
=25 °C,
V
GS
=10 V
80
A
T
C
=100 °C,
V
GS
=10 V
2)
80
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
320
Avalanche energy, single pulse
3)
E
AS
I
D
=40 A
250
mJ
Drain gate voltage
2)
V
DG
55
V
Gate source voltage
4)
V
GS
±16
V
Power dissipation
P
tot
T
C
=25 °C
136
W
Operating and storage temperature
T
j
,
T
stg
-55 ... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
V
DS
55
V
R
DS(on),max
(SMD version)
5.6
m
I
D
80
A
Product Summary
PG-TO220-3-1
PG-TO262-3-1
PG-TO263-3-2
Type
Package
Ordering Code
Marking
IPB80N06S3L-06
PG-TO263-3-2
SP0000-88004
3N06L06
IPI80N06S3L-06
PG-TO262-3-1
SP0000-88002
3N06L06
IPP80N06S3L-06
PG-TO220-3-1
SP0000-88006
3N06L06
Rev. 1.0
page 1
2005-09-16
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