- 您现在的位置：买卖IC网 > PDF目录383112 > IPB80N08S2-07 (INFINEON TECHNOLOGIES AG) OptiMOS㈢ Power-Transistor PDF资料下载
参数资料
| 型号： | IPB80N08S2-07 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢ Power-Transistor |
| 中文描述： | 的OptiMOS㈢功率晶体管 |
| 文件页数： | 1/8页 |
| 文件大小： | 170K |
| 代理商： | IPB80N08S2-07 |
IPB80N08S2-07
IPP80N08S2-07, IPI80N08S2-07
Opti
MOS
Power-Transistor
Features
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
100% Avalanche tested
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Unit
Continuous drain current
1)
I
D
T
C
=25 °C,
V
GS
=10 V
80
A
T
C
=100 °C,
V
GS
=10 V
2)
80
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
320
Avalanche energy, single pulse
2)
E
AS
I
D
=80A
810
mJ
Gate source voltage
4)
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
300
W
Operating and storage temperature
T
j
,
T
stg
-55 ... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
V
DS
75
V
R
DS(on),max
(SMD version)
7.1
m
I
D
80
A
Product Summary
PG-TO220-3-1
PG-TO262-3-1
PG-TO263-3-2
Type
Package
Ordering Code
Marking
IPB80N08S2-07
PG-TO263-3-2
SP0002-19048
2N0807
IPP80N08S2-07
PG-TO220-3-1
SP0002-19040
2N0807
IPI80N08S2-07
PG-TO262-3-1
SP0002-19043
2N0807
Rev. 1.0
page 1
2006-03-03
相关PDF资料 |
PDF描述 |
|---|---|
| IPB80N08S2L-07 | OptiMOS㈢ Power-Transistor |
| IPB80P03P3L-04 | OptiMOS-P Power-Transistor |
| IPD03N03LB | OptiMOS 2 Power-Transistor |
| IPD03N03LBG | OptiMOS 2 Power-Transistor |
| IPD03N03LA | Ideal for high-frequency dc/dc converters Qualified according to JEDEC for target applications |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IPB80N08S207ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 75V 80A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 75V 80A TO263-3 |
| IPB80N08S2L07 | 功能描述:MOSFET MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB80N08S2L-07 | 功能描述:MOSFET OptiMOS PWR TRANST 75V 80A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB80N08S2L07ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 75V 80A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 75V 80A TO263-3 |
| IPB80P03P3L-04 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS-P Power-Transistor |
发布紧急采购，3分钟左右您将得到回复。