型号: | IPB80N08S2L-07 |
厂商: | INFINEON TECHNOLOGIES AG |
英文描述: | OptiMOS㈢ Power-Transistor |
中文描述: | 的OptiMOS㈢功率晶体管 |
文件页数: | 1/8页 |
文件大小: | 163K |
代理商: | IPB80N08S2L-07 |
相关PDF资料 |
PDF描述 |
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IPB80P03P3L-04 | OptiMOS-P Power-Transistor |
IPD03N03LB | OptiMOS 2 Power-Transistor |
IPD03N03LBG | OptiMOS 2 Power-Transistor |
IPD03N03LA | Ideal for high-frequency dc/dc converters Qualified according to JEDEC for target applications |
IPD04N03L | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT02; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle |
相关代理商/技术参数 |
参数描述 |
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IPB80N08S2L07ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 75V 80A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 75V 80A TO263-3 |
IPB80P03P3L-04 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS-P Power-Transistor |
IPB80P03P4-05 | 功能描述:MOSFET P-Channel -30V MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
IPB80P03P405ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 30V 80A TO263-3 |
IPB80P03P4L-04 | 功能描述:MOSFET P-Channel -30V MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |