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参数资料
| 型号： | IPB80N08S2L-07 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢ Power-Transistor |
| 中文描述： | 的OptiMOS㈢功率晶体管 |
| 文件页数： | 7/8页 |
| 文件大小： | 163K |
| 代理商： | IPB80N08S2L-07 |
IPB80N08S2L-07
IPP80N08S2L-07
13 Typical avalanche energy
14 Typ. gate charge
E
AS
= f(
T
j
)
V
GS
= f(
Q
gate
);
I
D
= 80 A pulsed
parameter:
I
D
=80A
parameter:
V
DD
15 Typ. drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)
= f(
T
j
);
I
D
= 1 mA
0
100
200
300
400
500
600
700
800
900
25
75
125
175
T
j
[°C]
E
A
V
GS
Q
gate
Q
gs
Q
gd
Q
g
15V
60V
0
2
4
6
8
10
12
0
40
80
Q
gate
[nC]
120
160
200
V
G
66
71
76
81
86
-60
-20
20
60
100
140
180
T
j
[°C]
V
B
Rev. 1.0
page 7
2006-03-03
相关PDF资料 |
PDF描述 |
|---|---|
| IPB80P03P3L-04 | OptiMOS-P Power-Transistor |
| IPD03N03LB | OptiMOS 2 Power-Transistor |
| IPD03N03LBG | OptiMOS 2 Power-Transistor |
| IPD03N03LA | Ideal for high-frequency dc/dc converters Qualified according to JEDEC for target applications |
| IPD04N03L | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT02; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IPB80N08S2L07ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 75V 80A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 75V 80A TO263-3 |
| IPB80P03P3L-04 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS-P Power-Transistor |
| IPB80P03P4-05 | 功能描述:MOSFET P-Channel -30V MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB80P03P405ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 30V 80A TO263-3 |
| IPB80P03P4L-04 | 功能描述:MOSFET P-Channel -30V MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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