参数资料
型号: IPB80N08S2L-07
厂商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS㈢ Power-Transistor
中文描述: 的OptiMOS㈢功率晶体管
文件页数: 6/8页
文件大小: 163K
代理商: IPB80N08S2L-07
IPB80N08S2L-07
IPP80N08S2L-07
9 Typ. Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(ON)
= f(
T
j
)
V
GS(th)
= f(
T
j
);
V
GS
=
V
DS
parameter:
I
D
= 80 A; V
GS
= 10 V
parameter:
I
D
11 Typ. capacitances
12 Typical forward diode characteristicis
C
= f(
V
DS
);
V
GS
= 0 V;
f
= 1 MHz
IF = f(V
SD
)
parameter:
T
j
25 °C
175 °C
10
3
10
2
10
1
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
[V]
I
F
Ciss
Coss
Crss
10
4
10
3
10
2
0
5
10
15
20
25
30
V
DS
[V]
C
250μA
1250μA
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
180
T
j
[°C]
V
G
2
4
6
8
10
12
-60
-20
20
60
100
140
180
T
j
[°C]
R
D
]
Rev. 1.0
page 6
2006-03-03
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