- 您现在的位置：买卖IC网 > PDF目录383112 > IPB80N06S3L-08 (INFINEON TECHNOLOGIES AG) OptiMOS㈢-T Power-Transistor PDF资料下载
参数资料
| 型号： | IPB80N06S3L-08 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢-T Power-Transistor |
| 中文描述： | ㈢的OptiMOS - T的功率晶体管 |
| 文件页数： | 2/8页 |
| 文件大小： | 164K |
| 代理商： | IPB80N06S3L-08 |
IPB80N06S3L-08
IPI80N06S3L-08, IPP80N06S3L-08
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics
2)
Thermal resistance, junction - case
R
thJC
-
-
1.4
K/W
Thermal resistance, junction -
ambient, leaded
R
thJA
-
-
62
SMD version, device on PCB
R
thJA
minimal footprint
-
-
62
6 cm
2
cooling area
5)
-
-
40
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V,
I
D
= 1 mA
55
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=
V
GS
,
I
D
=55 μA
1.2
1.7
2.2
Zero gate voltage drain current
I
DSS
V
DS
=55 V,
V
GS
=0 V,
T
j
=25 °C
-
0.01
1
μA
V
DS
=55 V,
V
GS
=0 V,
T
j
=125 °C
2)
-
1
100
Gate-source leakage current
I
GSS
V
GS
=16 V,
V
DS
=0 V
-
1
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=5 V,
I
D
=29 A
-
11.5
14.2
m
V
GS
=5 V,
I
D
=29 A,
SMD version
-
11.2
13.9
V
GS
=10 V,
I
D
=43 A
-
6.5
7.9
V
GS
=10 V,
I
D
=43 A,
SMD version
-
6.2
7.6
Values
Rev. 1.0
page 2
2005-09-16
相关PDF资料 |
PDF描述 |
|---|---|
| IPB80N08S2-07 | OptiMOS㈢ Power-Transistor |
| IPB80N08S2L-07 | OptiMOS㈢ Power-Transistor |
| IPB80P03P3L-04 | OptiMOS-P Power-Transistor |
| IPD03N03LB | OptiMOS 2 Power-Transistor |
| IPD03N03LBG | OptiMOS 2 Power-Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IPB80N06S3L-08_07 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS-T2 Power-Transistor |
| IPB80N06S3L08XT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) TO-263 |
| IPB80N06S4-05 | 功能描述:MOSFET N-Channel 60V MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB80N06S405ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 60V 80A TO263-3 |
| IPB80N06S405ATMA2 | 制造商:Infineon Technologies AG 功能描述:IPB80N06S405XT 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel |
发布紧急采购，3分钟左右您将得到回复。