参数资料
型号: IPD50P03P4L-11
厂商: INFINEON TECHNOLOGIES AG
元件分类: JFETs
英文描述: 50 A, 30 V, 0.0105 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
封装: GREEN, PLASTIC PACKAGE-3
文件页数: 2/9页
文件大小: 159K
代理商: IPD50P03P4L-11
IPD50P03P4L-11
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics
2)
Thermal resistance, junction - case
R thJC
-
2.6
K/W
SMD version, device on PCB
R thJA
minimal footprint
-
62
6 cm
2 cooling area3)
--
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= -1mA
-30
-
V
Gate threshold voltage
V GS(th)
V DS=V GS, I D=-85A
-1.0
-1.5
-2.0
Zero gate voltage drain current
I DSS
V DS=-24V, V GS=0V,
T j=25°C
-
-0.02
-1
A
V DS=-24V, V GS=0V,
T j=125°C
2)
-
-7
-70
Gate-source leakage current
I GSS
V GS=-16V, V DS=0V
-
-100
nA
Drain-source on-state resistance
R DS(on)
V GS=-4.5V, I D=-25A
-
13.0
18.0
m
V GS=-10V, I D=-50A
-
8.3
10.5
Values
Rev. 1.1
page 2
2009-07-29
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