参数资料
型号: IPD50P03P4L-11
厂商: INFINEON TECHNOLOGIES AG
元件分类: JFETs
英文描述: 50 A, 30 V, 0.0105 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
封装: GREEN, PLASTIC PACKAGE-3
文件页数: 9/9页
文件大小: 159K
代理商: IPD50P03P4L-11
IPD50P03P4L-11
Revision History
Version
Revision 1.1
Changes
ZthJC scaling for x-axis added
Date
29.07.2009
Rev. 1.1
page 9
2009-07-29
相关PDF资料
PDF描述
IPP032N06N3G 120 A, 60 V, 0.0032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IPR1Z1AD7/1LOS PUSHBUTTON SWITCH, SPST, LATCHED, 0.1A, 24VDC, PANEL MOUNT-THREADED
IPR1Z1AD5LOS PUSHBUTTON SWITCH, SPST, LATCHED, 0.1A, 24VDC, PANEL MOUNT-THREADED
IPR1Z1AD3LOY PUSHBUTTON SWITCH, SPST, LATCHED, 0.1A, 24VDC, PANEL MOUNT-THREADED
IPR1Z1AD2LOG PUSHBUTTON SWITCH, SPST, LATCHED, 0.1A, 24VDC, PANEL MOUNT-THREADED
相关代理商/技术参数
参数描述
IPD50P03P4L11ATMA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 30V 50A 3-Pin(2+Tab) TO-252 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 30V 50A TO252-3
IPD50P04P4-13 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IPD50P04P413ATMA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) TO-252 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel
IPD50P04P4L-11 功能描述:MOSFET P-Channel -40V MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IPD50P04P4L11ATMA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) TO-252 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 40V 50A TO252-3