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参数资料
| 型号： | IPD50P03P4L-11 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 30 V, 0.0105 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | GREEN, PLASTIC PACKAGE-3 |
| 文件页数： | 7/9页 |
| 文件大小： | 159K |
| 代理商： | IPD50P03P4L-11 |
IPD50P03P4L-11
13 Avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = -1mA
parameter: I D
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = -50A pulsed
parameter: V DD
V GS
Q gate
V gs(th)
Q g(th)
Q gs
Q gd
Q sw
Q g
28
29
30
31
32
33
-60
-20
20
60
100
140
180
T j [°C]
-V
BR(
DSS)
[V]
24V
6V
0
2
4
6
8
10
12
0
1020
3040
50
Q gate [nC]
-V
GS
[V]
-50A
-25A
-12.5A
0
50
100
150
200
250
25
75
125
175
T j [°C]
E
AS
[m
J
]
Rev. 1.1
page 7
2009-07-29
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IPD50P03P4L11ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 30V 50A 3-Pin(2+Tab) TO-252 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 30V 50A TO252-3 |
| IPD50P04P4-13 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPD50P04P413ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) TO-252 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel |
| IPD50P04P4L-11 | 功能描述:MOSFET P-Channel -40V MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPD50P04P4L11ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) TO-252 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 40V 50A TO252-3 |
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