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参数资料
| 型号： | IPD50P03P4L-11 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 30 V, 0.0105 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | GREEN, PLASTIC PACKAGE-3 |
| 文件页数： | 6/9页 |
| 文件大小： | 159K |
| 代理商： | IPD50P03P4L-11 |
IPD50P03P4L-11
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
11 Typical forward diode characteristicis
12 Avalanche characteristics
IF = f(VSD)
I A S= f(t AV)
parameter: T j
parameter: Tj(start)
25°C
100°C
150°C
1
10
100
1
10
100
1000
t AV [s]
I AV
[A]
25 °C
175 °C
10
3
10
2
10
1
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-V SD [V]
-I
F[A]
-85A
-850A
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
-60
-20
20
60
100
140
180
T j [°C]
-V
GS
(th)
[V]
-Ciss
-Coss
-Crss
10
3
10
2
10
1
10
4
0
5
10
15
20
25
30
-V DS [V]
C
[
pF]
Rev. 1.1
page 6
2009-07-29
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IPD50P03P4L11ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 30V 50A 3-Pin(2+Tab) TO-252 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 30V 50A TO252-3 |
| IPD50P04P4-13 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPD50P04P413ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) TO-252 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel |
| IPD50P04P4L-11 | 功能描述:MOSFET P-Channel -40V MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPD50P04P4L11ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) TO-252 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 40V 50A TO252-3 |
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