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参数资料
| 型号： | IPI25N06S3L-22 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢-T Power-Transistor |
| 中文描述： | ㈢的OptiMOS - T的功率晶体管 |
| 文件页数： | 3/8页 |
| 文件大小： | 165K |
| 代理商： | IPI25N06S3L-22 |
IPB25N06S3L-22
IPI25N06S3L-22, IPP25N06S3L-22
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics
2)
Input capacitance
C
iss
-
2260
-
pF
Output capacitance
C
oss
-
283
-
Reverse transfer capacitance
C
rss
-
270
-
Turn-on delay time
t
d(on)
-
9
-
ns
Rise time
t
r
-
26
-
Turn-off delay time
t
d(off)
-
30
-
Fall time
t
f
-
43
-
Gate Charge Characteristics
2)
Gate to source charge
Q
gs
-
11
-
nC
Gate to drain charge
Q
gd
-
6
-
Gate charge total
Q
g
-
31
47
Gate plateau voltage
V
plateau
-
4.7
-
V
Reverse Diode
Diode continous forward current
2)
I
S
-
-
25
A
Diode pulse current
2)
I
S,pulse
-
-
100
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=25 A,
T
j
=25 °C
V
R
=27.5 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/μs
0.6
0.9
1.3
V
Reverse recovery time
2)
t
rr
-
32
-
ns
Reverse recovery charge
2)
Q
rr
-
28
-
nC
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 μm thick) copper area for drain
connection. PCB is vertical in still air.
1)
Current is limited by bondwire; with an
R
thJC
= 3.3 K/W the chip is able to carry 31 A at 25°C. For detailed
information see Application Note ANPS071E at
www.infineon.com/optimos
2)
Defined by design. Not subject to production test.
3)
See diagrams 12 and 13.
4)
Qualified at -5V and +16V.
T
C
=25 °C
Values
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
V
DD
=27.5 V,
V
GS
=10 V,
I
D
=25 A,
R
G
=14.8
V
DD
=11 V,
I
D
=25 A,
V
GS
=0 to 10 V
Rev. 1.0
page 3
2005-09-16
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