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参数资料
| 型号： | IR2112S |
| 厂商： | International Rectifier |
| 英文描述： | HIGH AND LOW SIDE DRIVER |
| 中文描述： | 高端和低端驱动 |
| 文件页数： | 1/17页 |
| 文件大小： | 176K |
| 代理商： | IR2112S |
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
Also available LEAD-FREE
HIGH AND LOW SIDE DRIVER
Product Summary
VOFFSET
600V max.
IO+/-
200 mA / 420 mA
VOUT
10 - 20V
ton/off (typ.)
125 & 105 ns
Delay Matching
30 ns
www.irf.com
1
Data Sheet No. PD60026-R
IR2112(S) & (PbF)
Description
The IR2112(S) is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
dized monolithic construction. Logic inputs are com-
patible with standard CMOS or LSTTL outputs, down
to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-
conduction. Propagation delays are matched to simplify use in high frequency applications. The floating
channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates up to 600 volts.
HIN
up to 600V
TO
LOAD
V
DD
V
B
V
S
HO
LO
COM
HIN
LIN
V
SS
SD
V
CC
LIN
V
DD
SD
V
SS
V
CC
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
Typical Connection
Packages
14-Lead PDIP
16-Lead SOIC
(wide body)
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| IR2112SPBF | 功能描述:功率驱动器IC HI LO SIDE DRVR 600V 200mA 135ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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