参数资料
型号: IR2112S
厂商: International Rectifier
英文描述: HIGH AND LOW SIDE DRIVER
中文描述: 高端和低端驱动
文件页数: 11/17页
文件大小: 176K
代理商: IR2112S
IR2112(S) & (PbF)
www.irf.com
3
Symbol
Definition
Figure Min.
Typ. Max. Units Test Conditions
ton
Turn-On Propagation Delay
7
125
180
VS = 0V
toff
Turn-Off Propagation Delay
8
105
160
VS = 600V
tsd
Shutdown Propagation Delay
9
105
160
VS = 600V
tr
Turn-On Rise Time
10
80
130
tf
Turn-Off Fall Time
11
40
65
MT
Delay Matching, HS & LS Turn-On/Off
30
ns
Dynamic Electrical Characteristics
VBIAS (VCC, VBS, VDD) = 15V, CL = 1000 pF, TA = 25°C and VSS = COM unless otherwise specified. The dynamic
electrical characteristics are measured using the test circuit shown in Figure 3.
Symbol
Definition
Figure Min.
Typ. Max. Units Test Conditions
VIH
Logic “1” Input Voltage
12
9.5
VIL
Logic “0” Input Voltage
13
6.0
VOH
High Level Output Voltage, VBIAS - VO
14
100
IO = 0A
VOL
Low Level Output Voltage, VO
15
100
IO = 0A
ILK
Offset Supply Leakage Current
16
50
VB = VS = 600V
IQBS
Quiescent VBS Supply Current
17
25
60
VIN = 0V or VDD
IQCC
Quiescent VCC Supply Current
18
80
180
VIN = 0V or VDD
IQDD
Quiescent VDD Supply Current
19
2.0
5.0
VIN = 0V or VDD
IIN+
Logic “1” Input Bias Current
20
20
40
VIN = VDD
IIN-
Logic “0” Input Bias Current
21
1.0
VIN = 0V
VBSUV+
VBS Supply Undervoltage Positive Going
22
7.4
8.5
9.6
Threshold
VBSUV-
VBS Supply Undervoltage Negative Going
23
7.0
8.1
9.2
Threshold
VCCUV+
VCC Supply Undervoltage Positive Going
24
7.6
8.6
9.6
Threshold
VCCUV-
VCC Supply Undervoltage Negative Going
25
7.2
8.2
9.2
Threshold
IO+
Output High Short Circuit Pulsed Current
26
200
250
VO = 0V, VIN = VDD
PW
≤ 10 s
IO-
Output Low Short Circuit Pulsed Current
27
420
500
VO = 15V, VIN = 0V
PW
≤ 10 s
Static Electrical Characteristics
VBIAS (VCC, VBS, VDD) = 15V, TA = 25°C and VSS = COM unless otherwise specified. The VIN, VTH and IIN parameters
are referenced to VSS and are applicable to all three logic input leads: HIN, LIN and SD. The VO and IO parameters are
referenced to COM and are applicable to the respective output leads: HO or LO.
A
V
mA
V
mV
相关PDF资料
PDF描述
IR3313SPBF PROGRAMMABLE CURRENT SENSE HIGH SIDE SWITCH
IR3622AMTRPbF HIGH FREQUENCY 2-PHASE, SINGLE OR DUAL OUTPUT SYNCHRONOUS STEP DOWN CONTROLLER WITH OUTPUT TRACKING AND SEQUENCING
IR3628MPBF HIGH FREQUENCY SYNCHRONOUS PWM BUCK CONTROLLER
IR3628MTRPBF HIGH FREQUENCY SYNCHRONOUS PWM BUCK CONTROLLER
IR3629AMPBF HIGH FREQUENCY SYNCHRONOUS PWM BUCK CONTROLLER WITH POWER GOOD OUTPUT
相关代理商/技术参数
参数描述
IR2112SPBF 功能描述:功率驱动器IC HI LO SIDE DRVR 600V 200mA 135ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IR2112STR 功能描述:IC MOSFET DRVR HI/LO SIDE 16SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大(自引导启动):- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6,D²Pak(5 引线+接片),TO-263BA 供应商设备封装:TO-263 包装:管件
IR2112STRPBF 功能描述:功率驱动器IC HI LO SIDE DRVR 600V 200mA 135ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IR2113 功能描述:IC MOSFET DRVR HI/LO SIDE 14-DIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大(自引导启动):600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP(0.300",7.62mm) 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127
IR2113-1 功能描述:IC MOSFET DRVR HI/LO SIDE 14-DIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大(自引导启动):- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6,D²Pak(5 引线+接片),TO-263BA 供应商设备封装:TO-263 包装:管件