参数资料
型号: IR2112S
厂商: International Rectifier
英文描述: HIGH AND LOW SIDE DRIVER
中文描述: 高端和低端驱动
文件页数: 10/17页
文件大小: 176K
代理商: IR2112S
IR2112(S) & (PbF)
2
www.irf.com
Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip
DT97-3 for more details).
Note 2: When VDD < 5V, the minimum VSS offset is limited to -VDD.
Symbol
Definition
Min.
Max.
Units
VB
High Side Floating Supply Absolute Voltage
VS + 10
VS + 20
VS
High Side Floating Supply Offset Voltage
Note 1
600
VHO
High Side Floating Output Voltage
VS
VB
VCC
Low Side Fixed Supply Voltage
10
20
VLO
Low Side Output Voltage
0
VCC
VDD
Logic Supply Voltage
VSS + 3
VSS + 20
VSS
Logic Supply Offset Voltage
-5 (Note 2)
5
VIN
Logic Input Voltage (HIN, LIN & SD)
VSS
VDD
TA
Ambient Temperature
-40
125
°C
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The VS and VSS offset ratings are tested with all supplies biased at 15V differential. Typical
ratings at other bias conditions are shown in Figures 36 and 37.
V
Symbol
Definition
Min.
Max.
Units
VB
High Side Floating Supply Voltage
-0.3
625
VS
High Side Floating Supply Offset Voltage
VB - 25
VB + 0.3
VHO
High Side Floating Output Voltage
VS - 0.3
VB + 0.3
VCC
Low Side Fixed Supply Voltage
-0.3
25
VLO
Low Side Output Voltage
-0.3
VCC + 0.3
VDD
Logic Supply Voltage
-0.3
VSS + 25
VSS
Logic Supply Offset Voltage
VCC - 25
VCC + 0.3
VIN
Logic Input Voltage (HIN, LIN & SD)
VSS - 0.3
VDD + 0.3
dVs/dt
Allowable Offset Supply Voltage Transient (Figure 2)
50
V/ns
PD
Package Power Dissipation @ TA ≤ +25° C
(14 Lead DIP)
1.6
(16 Lead SOIC)
1.25
RTHJA
Thermal Resistance, Junction to Ambient
(14 Lead DIP)
75
(16 Lead SOIC)
100
TJ
Junction Temperature
150
TS
Storage Temperature
-55
150
TL
Lead Temperature (Soldering, 10 seconds)
300
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions. Additional information is shown in Figures 28 through 35.
°C/W
W
V
°C
相关PDF资料
PDF描述
IR3313SPBF PROGRAMMABLE CURRENT SENSE HIGH SIDE SWITCH
IR3622AMTRPbF HIGH FREQUENCY 2-PHASE, SINGLE OR DUAL OUTPUT SYNCHRONOUS STEP DOWN CONTROLLER WITH OUTPUT TRACKING AND SEQUENCING
IR3628MPBF HIGH FREQUENCY SYNCHRONOUS PWM BUCK CONTROLLER
IR3628MTRPBF HIGH FREQUENCY SYNCHRONOUS PWM BUCK CONTROLLER
IR3629AMPBF HIGH FREQUENCY SYNCHRONOUS PWM BUCK CONTROLLER WITH POWER GOOD OUTPUT
相关代理商/技术参数
参数描述
IR2112SPBF 功能描述:功率驱动器IC HI LO SIDE DRVR 600V 200mA 135ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IR2112STR 功能描述:IC MOSFET DRVR HI/LO SIDE 16SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大(自引导启动):- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6,D²Pak(5 引线+接片),TO-263BA 供应商设备封装:TO-263 包装:管件
IR2112STRPBF 功能描述:功率驱动器IC HI LO SIDE DRVR 600V 200mA 135ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IR2113 功能描述:IC MOSFET DRVR HI/LO SIDE 14-DIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大(自引导启动):600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP(0.300",7.62mm) 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127
IR2113-1 功能描述:IC MOSFET DRVR HI/LO SIDE 14-DIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大(自引导启动):- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6,D²Pak(5 引线+接片),TO-263BA 供应商设备封装:TO-263 包装:管件