参数资料
| 型号： | IR3508ZMTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 13/19页 |
| 文件大小： | 0K |
| 描述： | IC CTRL XPHASE3 20MLPQ |
| 标准包装： | 1 |
| 系列： | * |
IR3508Z
Emulated Bootstrap Diode
IR3508Z integrates a PFET to emulate the bootstrap diode. If two or more top MOSFETs are to be driven at higher
switching frequency, an external bootstrap diode connected from VCCL pin to BOOST pin may be needed.
Over Voltage Protection (OVP)
The IR3508Z includes over-voltage protection that turns on the low side MOSFET to protect the load in the event of
a shorted high-side MOSFET, converter out of regulation, or connection of the converter output to an excessive
output voltage. As shown in Figure 7, if IOUT pin voltage is above V(VCCL) – 0.8V, which represents over-voltage
condition detected by control IC, the over-voltage latch is set. GATEL drives high and GATEH drives low. The OVP
circuit overrides the normal PWM operation and within approximately 150ns will fully turn-on the low side MOSFET,
which remains in conduction until IOUT drops below V(VCCL) – 0.8V when over voltage ends. The over voltage
fault is latched in control IC and can only be reset by cycling the power to control IC. The error amplifier output
(EAIN) is pulled down by control IC and will remain low. The lower MOSFETs alone can not clamp the output
voltage however a SCR or N-MOSFET could be triggered with the OVP output to prevent processor damage.
OUTPUT
OVP
VOLTAGE
(VO)
THRESHOLD
130mV
VCCL-800 mV
IOUT(ISHARE)
GATEH
(PHASE IC)
GATEL
(PHASE IC)
FAULT
LATCH
ERROR
AMPLIFIER
OUTPUT
(EAOUT)
VDAC
NORMAL OPERATION
OVP CONDITION
AFTER
OVP
Figure 7: Over-voltage protection waveforms
Operation at Higher Output Voltage
The proper operation of the phase IC is ensured for output voltage up to 5.1V. Similarly, the minimum VCC for
proper operation of the phase IC is 8 V. Operating below this minimum voltage, the current sharing performance of
the phase IC is affected.
Page 13 of 19
Jan 09, 2009
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IR3510 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HOT-SWAP N+1 REDUNDANT XPHASETM CONTROL IC |
| IR3510MPBF | 功能描述:IC XPHASE CONTROL 32-MLPQ RoHS:是 类别:集成电路 (IC) >> PMIC - 电源管理 - 专用 系列:XPhase™ 应用说明:Ultrasound Imaging Systems Application Note 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:37 系列:- 应用:医疗用超声波成像，声纳 电流 - 电源:- 电源电压:2.37 V ~ 6 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:56-WFQFN 裸露焊盘 供应商设备封装:56-TQFN-EP（8x8） 包装:管件 |
| IR3510MTRPBF | 功能描述:热插拔功率分布 HOT-SWAP N+1 XPHASE CTRL IC RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube |
| IR3513MTRPBF | 功能描述:开关变换器、稳压器与控制器 2 CH OR 2 PHASE SYNC PWM CNTRLR RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| IR3513XMTRPBF | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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