参数资料
| 型号： | IR3508ZMTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 15/19页 |
| 文件大小： | 0K |
| 描述： | IC CTRL XPHASE3 20MLPQ |
| 标准包装： | 1 |
| 系列： | * |
IR3508Z
LAYOUT GUIDELINES
The following layout guidelines are recommended to reduce the parasitic inductance and resistance of the PCB
layout; therefore, minimizing the noise coupled to the IC.
? Dedicate at least one middle layer for a ground plane, which is then split into signal ground plane (LGND) and
power ground plane (PGND).
? Separate analog bus (EAIN, DACIN, and IOUT) from digital bus (CLKIN, PSI, PHSIN, and PHSOUT) to reduce
the noise coupling.
? Connect PGND to LGND pins of each phase IC to the ground tab, which is tied to LGND and PGND planes
respectively through vias.
? Place current sense resistors and capacitors (R CS and C CS ) close to phase IC. Use Kelvin connection for the
inductor current sense wires, but separate the two wires by ground polygon. The wire from the inductor
terminal to CSIN- should not cross over the fast transition nodes, i.e., switching nodes, gate drive outputs, and
bootstrap nodes.
? Place the decoupling capacitors C VCC and C VCCL as close as possible to VCC and VCCL pins of the phase IC
respectively.
? Place the phase IC as close as possible to the MOSFETs to reduce the parasitic resistance and inductance of
the gate drive paths.
? Place the input ceramic capacitors close to the drain of top MOSFET and the source of bottom MOSFET. Use
combination of different packages of ceramic capacitors.
? There are two switching power loops. One loop includes the input capacitors, top MOSFET, inductor, output
capacitors and the load; another loop consists of bottom MOSFET, inductor, output capacitors and the load.
Route the switching power paths using wide and short traces or polygons; use multiple vias for connections
between layers.
To Digital Bus
To Gate
Drive
Voltage
To Bottom
MOSFET
NC
PHSOUT
CLKIN
PGND
GATEL
To Analog Bus
NC
EAIN
CSIN -
CSIN+
VCC
LGND
PLANE
To VIN
PGND
PLANE
To Switching
Node
To Top
MOSFET
To LGND
Plane
Ground
Polygon
To Inductor Sense
Page 15 of 19
Jan 09, 2009
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IR3510 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HOT-SWAP N+1 REDUNDANT XPHASETM CONTROL IC |
| IR3510MPBF | 功能描述:IC XPHASE CONTROL 32-MLPQ RoHS:是 类别:集成电路 (IC) >> PMIC - 电源管理 - 专用 系列:XPhase™ 应用说明:Ultrasound Imaging Systems Application Note 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:37 系列:- 应用:医疗用超声波成像，声纳 电流 - 电源:- 电源电压:2.37 V ~ 6 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:56-WFQFN 裸露焊盘 供应商设备封装:56-TQFN-EP（8x8） 包装:管件 |
| IR3510MTRPBF | 功能描述:热插拔功率分布 HOT-SWAP N+1 XPHASE CTRL IC RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube |
| IR3513MTRPBF | 功能描述:开关变换器、稳压器与控制器 2 CH OR 2 PHASE SYNC PWM CNTRLR RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| IR3513XMTRPBF | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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