参数资料
| 型号： | IR3508ZMTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 3/19页 |
| 文件大小： | 0K |
| 描述： | IC CTRL XPHASE3 20MLPQ |
| 标准包装： | 1 |
| 系列： | * |
8.0V ≤ V CC ≤ 28V, 4.75V ≤ V CCL ≤ 7.5V, 0 C ≤ T J ≤ 125 C. 0.5V ≤ V(DACIN) ≤ 1.6V, 500kHz ≤ CLKIN ≤ 9MHz, 250kHz
IR3508Z
RECOMMENDED OPERATING CONDITIONS FOR RELIABLE OPERATION WITH MARGIN
o o
≤ PHSIN ≤ 1.5MHz.
ELECTRICAL CHARACTERISTICS
The electrical characteristics table lists the parametric range guaranteed to be within the recommended operating
conditions. Typical values represent the median values, which are related to 25°C.
C GATEH = 3.3nF, C GATEL = 6.8nF (unless otherwise specified)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
Gate Drivers
GATEH Source Resistance
GATEH Sink Resistance
GATEL Source Resistance
GATEL Sink Resistance
GATEH Source Current
GATEH Sink Current
GATEL Source Current
GATEL Sink Current
BOOST – SW = 7V. Note 1
BOOST – SW = 7V. Note 1
VCCL – PGND = 7V. Note 1
VCCL – PGND = 7V. Note 1
BOOST=7V, GATEH=2.5V, SW=0V.
BOOST=7V, GATEH=2.5V, SW=0V.
VCCL=7V, GATEL=2.5V, PGND=0V.
VCCL=7V, GATEL=2.5V, PGND=0V.
1.0
1.0
1.0
0.4
2.0
2.0
2.0
4.0
2.5
2.5
2.5
1.0
A
A
A
A
GATEH Rise Time
BOOST – SW = 7V, measure 1V to 4V
5
10
ns
transition time
GATEH Fall Time
BOOST – SW = 7V, measure 4V to 1V
5
10
ns
transition time
GATEL Rise Time
VCCL – PGND = 7V, Measure 1V to 4V
10
20
ns
transition time
GATEL Fall Time
VCCL – PGND = 7V, Measure 4V to 1V
5
10
ns
transition time
GATEL low to GATEH high
BOOST = VCCL = 7V, SW = PGND = 0V,
10
20
40
ns
delay
measure time from GATEL falling to 1V to
GATEH rising to 1V
GATEH low to GATEL high
BOOST = VCCL = 7V, SW = PGND = 0V,
10
20
40
ns
delay
measure time from GATEH falling to 1V to
GATEL rising to 1V
Disable Pull-Down
Note 1
30
80
130
k
Resistance
Clock
CLKIN Threshold
CLKIN Bias Current
CLKIN Phase Delay
PHSIN Threshold
PHSOUT Propagation
Compare to V(VCCL)
CLKIN = V(VCCL)
Measure time from CLKIN<1V to GATEH>1V
Compare to V(VCCL)
Measure time from CLKIN > (VCCL * 50% )
40
-0.5
40
35
4
45
0.0
75
50
15
57
0.5
125
55
35
%
μ A
ns
%
ns
125 C
Delay
to PHSOUT > (VCCL *50%). 10pF Load @
o
PHSIN Pull-Down
30
100
170
k
Resistance
PHSOUT High Voltage
I(PHSOUT) = -10mA, measure VCCL –
1
0.6
V
PHSOUT
PHSOUT Low Voltage
I(PHSOUT) = 10mA
0.4
1
V
Page 3 of 19
Jan 09, 2009
相关PDF资料 |
PDF描述 |
|---|---|
| IR3510MPBF | IC XPHASE CONTROL 32-MLPQ |
| IR3513ZMTRPBF | IC CTRL XPHASE3 POL 32-MLPQ |
| IR3514MTRPBF | IC XPHASE3 CONTROL HYBRD 40-MLPQ |
| IR3521MTRPBF | IC CTRL XPHASE3 SVID 32-MLPQ |
| IR3522MTRPBF | IC CTRL XPHASE3 DDR/VVT 32-MLPQ |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IR3510 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HOT-SWAP N+1 REDUNDANT XPHASETM CONTROL IC |
| IR3510MPBF | 功能描述:IC XPHASE CONTROL 32-MLPQ RoHS:是 类别:集成电路 (IC) >> PMIC - 电源管理 - 专用 系列:XPhase™ 应用说明:Ultrasound Imaging Systems Application Note 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:37 系列:- 应用:医疗用超声波成像，声纳 电流 - 电源:- 电源电压:2.37 V ~ 6 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:56-WFQFN 裸露焊盘 供应商设备封装:56-TQFN-EP（8x8） 包装:管件 |
| IR3510MTRPBF | 功能描述:热插拔功率分布 HOT-SWAP N+1 XPHASE CTRL IC RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube |
| IR3513MTRPBF | 功能描述:开关变换器、稳压器与控制器 2 CH OR 2 PHASE SYNC PWM CNTRLR RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| IR3513XMTRPBF | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。