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参数资料
| 型号： | IRF3205ZSTRLPBF |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 55 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | LEAD FREE, PLASTIC, D2PAK-3 |
| 文件页数： | 2/12页 |
| 文件大小： | 379K |
| 代理商： | IRF3205ZSTRLPBF |
IRF3205ZS/LPbF
10
www.irf.com
D2Pak (TO-263AB) Part Marking Information
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
DATE CODE
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
RECTIFIER
INTERNATIONAL
PART NUMBER
P = DES IGNATES LEAD - FREE
PRODUCT (OPTIONAL)
F530S
IN THE AS SEMBLY LINE "L"
ASSEMBLED ON WW 02, 2000
THIS IS AN IRF530S WITH
LOT CODE 8024
INTERNATIONAL
LOGO
RECTIFIER
LOT CODE
AS SEMBLY
YEAR 0 = 2000
PART NUMBER
DATE CODE
LINE L
WEEK 02
OR
F530S
LOGO
ASS EMBLY
LOT CODE
Notes:
1. For an Automotive Qualified version of this part please see
http://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF3205ZSTRR | 功能描述:MOSFET N-CH 55V 75A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF3205ZSTRRPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 6.5mOhms 76nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF320LSPBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET㈢ Power MOSFET |
| IRF321 | 制造商:International Rectifier 功能描述: |
| IRF322 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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