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参数资料
| 型号： | IRF3205ZSTRLPBF |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 55 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | LEAD FREE, PLASTIC, D2PAK-3 |
| 文件页数： | 5/12页 |
| 文件大小： | 379K |
| 代理商： | IRF3205ZSTRLPBF |
IRF3205ZS/LPbF
2
www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.051
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
4.9
6.5
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
71
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Qg
Total Gate Charge
–––
76
110
Qgs
Gate-to-Source Charge
–––
21
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
30
–––
td(on)
Turn-On Delay Time
–––
18
–––
tr
Rise Time
–––95–––
td(off)
Turn-Off Delay Time
–––
45
–––
ns
tf
Fall Time
–––67–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
3450
–––
Coss
Output Capacitance
–––
550
–––
Crss
Reverse Transfer Capacitance
–––
310
–––
pF
Coss
Output Capacitance
–––
1940
–––
Coss
Output Capacitance
–––
430
–––
Coss eff.
Effective Output Capacitance
–––
640
–––
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
75
(Body Diode)
A
ISM
Pulsed Source Current
–––
440
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
28
42
ns
Qrr
Reverse Recovery Charge
–––
25
38
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 0V, VDS = 44V, = 1.0MHz
VGS = 0V, VDS = 0V to 44V
f
VGS = 10V
e
VDD = 28V
ID = 66A
RG = 6.8
TJ = 25°C, IS = 66A, VGS = 0V e
TJ = 25°C, IF = 66A, VDD = 25V
di/dt = 100A/s
e
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 66A
e
VDS = VGS, ID = 250A
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VDS = 25V, ID = 66A
ID = 66A
VDS = 44V
Conditions
VGS = 10V
e
VGS = 0V
VDS = 25V
= 1.0MHz
VGS = 20V
VGS = -20V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF3205ZSTRR | 功能描述:MOSFET N-CH 55V 75A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF3205ZSTRRPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 6.5mOhms 76nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF320LSPBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET㈢ Power MOSFET |
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| IRF322 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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