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参数资料
| 型号： | IRF634N |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 250 V, 0.435 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 3/11页 |
| 文件大小： | 301K |
| 代理商： | IRF634N |
IRF634N/S/L
www.irf.com
11
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Starting T
J = 25°C, L = 9.5mH
RG = 25, IAS = 4.8A,VGS=10V
Pulse width ≤ 400s; duty cycle ≤ 2%.
This is only applied to TO-220A package
D2Pak Tape & Reel Information
3
4
TR R
F EED D IRE CT IO N
1 .85 ( .0 73)
1 .65 ( .0 65)
1 .60 (.0 63)
1 .50 (.0 59)
4.10 ( .161)
3.90 ( .153)
TR L
F E ED DIR E CTIO N
10.90 (.429)
10.70 (.421)
16 .10 (.634)
15 .90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532 )
12.80 (.504 )
330.00
( 14.173)
M AX.
2 7.4 0 (1.079 )
2 3.9 0 (.9 41)
60.0 0 (2.362)
M IN .
30.40 (1.197)
M A X.
26 .40 (1 .03 9)
24 .40 (.9 61 )
NO TE S :
1 . CO M F OR M S TO EIA-418 .
2 . CO NTROL LIN G DIM E NSIO N: M IL LIM ET ER .
3 . DIM E NS IO N M EASURED @ HUB.
4 . INCLUDES FL AN GE DIST ORT ION @ O UT E R EDGE.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 9/00
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] (IRF634N),
Industrial (IRF634NS and IRF634NL) market.
Qualification Standards can be found on IR’s Web site.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF634NL | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET |
| IRF634NLPBF | 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF634NPBF | 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF634NS | 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF634NSPBF | 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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