参数资料
型号: IRF634N
元件分类: JFETs
英文描述: 8 A, 250 V, 0.435 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件页数: 8/11页
文件大小: 301K
代理商: IRF634N
IRF634N/S/L
6
www.irf.com
QG
QGS
QGD
VG
Charge
D.U.T.
VDS
ID
IG
3mA
VGS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V (B R)DSS
I AS
25
50
75
100
125
150
175
0
40
80
120
160
200
Starting T , Junction Temperature ( C)
E
,
Single
Pulse
Avalanche
Energy
(mJ)
J
AS
°
ID
TOP
BOTTOM
2.0A
3.4A
4.8A
R G
IAS
0.01
tp
D.U .T
L
V DS
+
-
VDD
DR IV E R
A
15V
20V
VGS
相关PDF资料
PDF描述
IRF644NPBF 14 A, 250 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF644NSTRLPBF 14 A, 250 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
IRF644NSTRRPBF 14 A, 250 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
IRF644PBF 14 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF644S 14 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
相关代理商/技术参数
参数描述
IRF634NL 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET
IRF634NLPBF 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF634NPBF 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF634NS 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF634NSPBF 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube