参数资料
型号: IRF634N
元件分类: JFETs
英文描述: 8 A, 250 V, 0.435 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件页数: 5/11页
文件大小: 301K
代理商: IRF634N
IRF634N/S/L
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V
, Drain-to-Source Voltage (V)
I
,
Drain-to-Source
Current
(A)
DS
D
4.5V
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 175 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V
, Drain-to-Source Voltage (V)
I
,
Drain-to-Source
Current
(A)
DS
D
4.5V
0.1
1
10
100
4.0
5.0
6.0
7.0
8.0
9.0
V
= 50V
20s PULSE WIDTH
DS
V
, Gate-to-Source Voltage (V)
I
,
Drain-to-Source
Current
(A)
GS
D
T = 25 C
J
°
T = 175 C
J
°
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T , Junction Temperature ( C)
R
,
Drain-to-Source
On
Resistance
(Normalized)
J
DS(on)
°
V
=
I =
GS
D
10V
7.9A
相关PDF资料
PDF描述
IRF644NPBF 14 A, 250 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF644NSTRLPBF 14 A, 250 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
IRF644NSTRRPBF 14 A, 250 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
IRF644PBF 14 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF644S 14 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
相关代理商/技术参数
参数描述
IRF634NL 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET
IRF634NLPBF 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF634NPBF 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF634NS 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRF634NSPBF 功能描述:MOSFET N-Chan 250V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube