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参数资料
| 型号： | IRF6603TR1 |
| 厂商： | International Rectifier |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 27A DIRECTFET |
| 产品变化通告： | (EP) Parts Discontinuation 25/May/2012 |
| 标准包装： | 1,000 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 27A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.4 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 72nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 6590pF @ 15V |
| 功率 - 最大： | 3.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DirectFET? 等容 MT |
| 供应商设备封装： | DIRECTFET? MT |
| 包装： | 带卷 (TR) |
PD - 94364F
IRF6603
HEXFET ? Power MOSFET
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
V DSS
30V
R DS(on) max
3.4m ? @V GS = 10V
5.5m ? @V GS = 4.5V
Qg(typ.)
48nC
l High Cdv/dt Immunity
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount
Techniques
MT
DirectFET ? ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6603 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and process. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6603 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation
of processors operating at higher frequencies. The IRF6603 has been optimized for parameters that are critical in synchronous buck
converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6603 offers particularly low Rds(on) and high Cdv/
dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
V GS
I D @ T A = 25°C
I D @ T A = 70°C
I D @ T C = 25°C
I DM
P D @T A = 25°C
P D @T A = 70°C
P D @T C = 25°C
T J
T STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
30
+20/-12
27
22
92
200
3.6
2.3
42
0.029
-40 to + 150
V
A
W
W/°C
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JA
R θ JA
Junction-to-Ambient
Junction-to-Ambient
–––
12.5
35
–––
R θ JA
R θ JC
R θ J-PCB
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
20
–––
1.0
–––
3.0
–––
°C/W
Notes ? through ? are on page 11
www.irf.com
1
12/22/05
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| IRF6604 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| IRF6607 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6607TR1 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6608 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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