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| 型号： | IRF6633TR1 |
| 厂商： | International Rectifier |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 16A DIRECTFET-MP |
| 标准包装： | 1,000 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 16A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.6 毫欧 @ 16A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1250pF @ 10V |
| 功率 - 最大： | 2.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DirectFET? 等容 MP |
| 供应商设备封装： | DIRECTFET? MP |
| 包装： | 带卷 (TR) |
PD - 96989B
IRF6633
DirectFET ? Power MOSFET ?
l
l
l
l
RoHs Compliant Containing No Lead and Bromide ?
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible ?
Ultra Low Package Inductance
Typical values (unless otherwise specified)
V DSS V GS R DS(on) R DS(on)
20V max ±20V max 4.1m ? @ 10V 7.0m ? @ 4.5V
Q g tot Q gd Q gs2 Q rr Q oss V gs(th)
l
Optimized for High Frequency Switching ?
11nC
4.0nC
1.2nC
32nC
8.8nC
1.8V
l
l
l
l
Ideal for CPU Core DC-DC Converters
Optimized for both Sync.FET and some Control FET
application ?
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques ?
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) ?
MP
DirectFET ? ISOMETRIC
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6633 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6633 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6633 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
bus converters including Rds(on) and gate charge to minimize losses .
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
V GS
I D @ T A = 25°C
I D @ T A = 70°C
I D @ T C = 25°C
I DM
E AS
I AR
20
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
12
20
±20
16
13
59
132
41
13
V
A
mJ
A
15
I D = 16A
10
ID= 13A
VDS = 16V
VDS= 10V
8
10
5
TJ = 125°C
6
4
TJ = 25°C
0
2.0 4.0 6.0 8.0 10.0
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance Vs. Gate Voltage
Notes:
? Click on this section to link to the appropriate technical paper.
? Click on this section to link to the DirectFET Website.
? Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
2
0
0 4 8 12 16 20 24
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
? T C measured with thermocouple mounted to top (Drain) of part.
? Repetitive rating; pulse width limited by max. junction temperature.
? Starting T J = 25°C, L = 0.51mH, R G = 25 ? , I AS = 13A.
1
4/17/06
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| IRF6633TR1PBF | 功能描述:MOSFET 20V 1 N-CH 7.0mOhm DirectFET 1.8Vgs RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6633TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6633TRPBF | 功能描述:MOSFET 20V 1 N-CH 7.0mOhm DirectFET 1.8Vgs RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6635 | 功能描述:MOSFET N-CH 30V 32A DIRECTFET RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF6635PBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:DirectFET Power MOSFET |
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