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| 型号： | IRF6645 |
| 厂商： | International Rectifier |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V DIRECTFET-SJ |
| 标准包装： | 4,800 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 5.7A，10V |
| Id 时的 Vgs(th)（最大）： | 4.9V @ 50µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 890pF @ 25V |
| 功率 - 最大： | 3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DirectFET? 等容 SJ |
| 供应商设备封装： | DIRECTFET? SJ |
| 包装： | 带卷 (TR) |
PD - 97006
IRF6645
DirectFET ? Power MOSFET ?
l
l
l
l
RoHs Compliant Containing No Lead and Bromide ?
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible ?
Ultra Low Package Inductance
Typical values (unless otherwise specified)
V DSS V GS R DS(on)
100V max ±20V max 28m ? @ 10V
Q g tot Q gd V gs(th)
l
l
Optimized for High Frequency Switching ?
Ideal for High Performance Isolated Converter
14nC
4.8nC
4.0V
Primary Switch Socket
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l
l
Optimized for Synchronous Rectification
Low Conduction Losses
Compatible with existing Surface Mount Techniques ?
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) ?
SJ
DirectFET ? ISOMETRIC
SH
SJ
SP
MZ
MN
Description
The IRF6645 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6645 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
V GS
I D @ T A = 25°C
I D @ T A = 70°C
I D @ T C = 25°C
I DM
E AS
I AR
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
100
±20
5.7
4.5
25
45
29
3.4
V
A
mJ
A
80
70
60
50
I D = 3.4A
TJ = 125°C
12
10
8
6
ID= 3.4A
VDS = 80V
VDS= 50V
40
4
30
20
TJ = 25°C
2
0
4
6
8
10
12
14
16
0
4
8
12
16
VGS, Gate-to-Source Voltage (V)
Fig 1. TypicalOn-Resistancevs.GateVoltage
Notes:
? Click on this section to link to the appropriate technical paper.
? Click on this section to link to the DirectFET Website.
? Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
? T C measured with thermocouple mounted to top (Drain) of part.
? Repetitive rating; pulse width limited by max. junction temperature.
? Starting T J = 25°C, L = 5.0mH, R G = 25 ? , I AS = 3.4A.
1
8/5/05
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF6645PBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:DirectFETPower MOSFET |
| IRF6645TR1 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 5.7A 7-Pin Direct-FET SJ T/R |
| IRF6645TR1PBF | 功能描述:MOSFET MOSFT 100V 25A 35mOhm 14nC Qg RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6645TR1PBF | 制造商:International Rectifier 功能描述:MOSFET 制造商:International Rectifier 功能描述:N MOSFET, 100V, 4.5A, DIRECTFET SJ |
| IRF6645TRPBF | 功能描述:MOSFET 100V 1 N-CH HEXFET DIRECTFET SJ RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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