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| 型号： | IRF6655TR1 |
| 厂商： | International Rectifier |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V DIRECTFET-SH |
| 产品变化通告： | (PMD) Leaded Parts Discontinuation 25/May/2012 |
| 标准包装： | 1,000 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 62 毫欧 @ 5A，10V |
| Id 时的 Vgs(th)（最大）： | 4.8V @ 25µA |
| 闸电荷(Qg) @ Vgs： | 11.7nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 530pF @ 25V |
| 功率 - 最大： | 2.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DirectFET? 等容 SH |
| 供应商设备封装： | DIRECTFET? SH |
| 包装： | 带卷 (TR) |
PD - 96926D
IRF6655
DirectFET ? Power MOSFET ?
l RoHS compliant containing no lead or bromide ?
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible ?
l Ultra Low Package Inductance
Typical values (unless otherwise specified)
V DSS V GS R DS(on)
100V max ±20V max 53m ? @ 10V
Q g tot Q gd V gs(th)
l Optimized for High Frequency Switching ?
8.7nC
2.8nC
3.9V
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Ideal for Control FET sockets in 36V – 75V in
Synchronous Buck applications
l Low Conduction Losses
l Compatible with existing Surface Mount Techniques ?
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) ?
SH
DirectFET ? ISOMETRIC
SQ SX ST
SH
MQ MX MT
MN
Description
The IRF6655 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the
lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
The IRF6655 is optimized for low power primary side bridge topologies in isolated DC-DC applications, and for high side control FET sockets in
non-isolated synchronous buck DC-DC applications for use in wide range universal Telecom systems (36V – 75V), and for secondary side
synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal perfor-
mance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high
performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
V GS
I D @ T A = 25°C
I D @ T A = 70°C
I D @ T C = 25°C
I DM
E AS
I AR
200
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
12.0
100
±20
4.2
3.4
19
34
11
5.0
V
A
mJ
A
180
160
140
120
100
T J = 125°C
I D = 5.0A
10.0
8.0
6.0
ID= 5.0A
VDS= 80V
VDS= 50V
VDS= 20V
80
60
4.0
40
20
0
T J = 25°C
2.0
0.0
4
6
8
10
12
14
16
18
0
2
4
6
8
10
VGS, Gate -to -Source Voltage (V)
QG Total Gate Charge (nC)
Notes:
Fig 1. Typical On-Resistance Vs. Gate Voltage
Fig 2. Typical On-Resistance Vs. Gate Voltage
? Click on this section to link to the appropriate technical paper.
? Click on this section to link to the DirectFET MOSFETs
? Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com
? Starting T J = 25°C, L = 0.89mH, R G = 25 ? , I AS = 5.0A.
? Surface mounted on 1 in. square Cu board, steady state.
? T C measured with thermocouple mounted to top (Drain) of part.
1
11/16/05
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