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参数资料
| 型号： | IRF6668TR1 |
| 厂商： | International Rectifier |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 80V 55A DIRECTFET-MZ |
| 产品变化通告： | (PMD) Leaded Parts Discontinuation 25/May/2012 |
| 标准包装： | 1,000 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 80V |
| 电流 - 连续漏极(Id) @ 25° C： | 55A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 15 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 4.9V @ 100µA |
| 闸电荷(Qg) @ Vgs： | 31nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1320pF @ 25V |
| 功率 - 最大： | 2.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DirectFET? 等容 MZ |
| 供应商设备封装： | DIRECTFET? MZ |
| 包装： | 带卷 (TR) |
PD - 97044A
IRF6668
DirectFET ? Power MOSFET ?
l
RoHS compliant containing no lead or bromide ?
Typical values (unless otherwise specified)
l
l
l
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible ?
Ultra Low Package Inductance
V DSS V GS R DS(on)
80V max ±20V max 12m ? @ 10V
Q g tot
22nC
Q gd
7.8nC
l
l
l
l
l
Optimized for High Frequency Switching ?
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
Compatible with existing Surface Mount Techniques ?
DirectFET ?
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) ?
MZ
ISOMETRIC
SH
SJ
SP
MZ
MN
Description
The IRF6668 combines the latest HEXFET? power MOSFET silicon technology with advanced DirectFET TM packaging to
achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving
previous best thermal resistance by 80%.
The IRF6668 is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V-60V ETSI
input voltage range systems. The IRF6668 is also ideal for secondary side synchronous rectification in regulated isolated DC-
DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency
and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance
isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
V GS
I D @ T C = 25°C
I D @ T C = 70°C
I DM
I S @ T C = 25°C
I S @ T C = 70°C
I SM
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Continuous Source Current (Body Diode)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
80
±20
55
44
170
81
52
170
V
A
Notes:
? Click on this section to link to the appropriate technical paper.
? Click on this section to link to the DirectFET Website.
? Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com
? T C measured with thermocouple mounted to top (Drain) of part.
1
11/4/05
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相关代理商/技术参数 |
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|---|---|
| IRF6668TR1PBF | 功能描述:MOSFET MOSFT 80V 55A 15mOhm 22nC Qg RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6668TRBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:DirectFET Power MOSFET |
| IRF6668TRPBF | 功能描述:MOSFET 80V 1 N-CH HEXFET 15mOhms 22nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6674TR1PBF | 功能描述:MOSFET MOSFT 60V 67A 11.2mOhm 25nC Qg RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6674TRPBF | 功能描述:MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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