参数资料
型号: IRF6655TR1
厂商: International Rectifier
文件页数: 10/11页
文件大小: 0K
描述: MOSFET N-CH 100V DIRECTFET-SH
产品变化通告: (PMD) Leaded Parts Discontinuation 25/May/2012
标准包装: 1,000
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 4.2A
开态Rds(最大)@ Id, Vgs @ 25° C: 62 毫欧 @ 5A,10V
Id 时的 Vgs(th)(最大): 4.8V @ 25µA
闸电荷(Qg) @ Vgs: 11.7nC @ 10V
输入电容 (Ciss) @ Vds: 530pF @ 25V
功率 - 最大: 2.2W
安装类型: 表面贴装
封装/外壳: DirectFET? 等容 SH
供应商设备封装: DIRECTFET? SH
包装: 带卷 (TR)
IRF6655
DirectFET ? Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6655). For 1000 parts on 7" reel,
order IRF6655TR1
REEL DIMENSIONS
STANDARD OPTION
METRIC
(QTY 4800)
IMPERIAL
TR1 OPTION
METRIC
(QTY 1000)
IMPERIAL
CODE
A
B
C
D
E
F
G
H
MIN
330.0
20.2
12.8
1.5
100.0
N.C
12.4
11.9
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
12.992
0.795
0.504
0.059
3.937
N.C
0.488
0.469
MAX
N.C
N.C
0.520
N.C
N.C
0.724
0.567
0.606
MIN
177.77
19.06
13.5
1.5
58.72
N.C
11.9
11.9
MAX
N.C
N.C
12.8
N.C
N.C
13.50
12.01
12.01
MIN
6.9
0.75
0.53
0.059
2.31
N.C
0.47
0.47
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
Loaded Tape Feed Direction
NOTE: CONTROLLING
DIMENSIONS IN MM
DIMENSIONS
METRIC
IMPERIAL
CODE
A
B
C
D
E
F
G
H
MIN
7.90
3.90
11.90
5.45
4.00
5.00
1.50
1.50
MAX
8.10
4.10
12.30
5.55
4.20
5.20
N.C
1.60
MIN
0.311
0.154
0.469
0.215
0.157
0.197
0.059
0.059
MAX
0.319
0.161
0.484
0.219
0.165
0.205
N.C
0.063
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information . 11/05
10
www.irf.com
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