参数资料
型号: IRF6645
厂商: International Rectifier
文件页数: 9/10页
文件大小: 0K
描述: MOSFET N-CH 100V DIRECTFET-SJ
标准包装: 4,800
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 5.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 35 毫欧 @ 5.7A,10V
Id 时的 Vgs(th)(最大): 4.9V @ 50µA
闸电荷(Qg) @ Vgs: 20nC @ 10V
输入电容 (Ciss) @ Vds: 890pF @ 25V
功率 - 最大: 3W
安装类型: 表面贴装
封装/外壳: DirectFET? 等容 SJ
供应商设备封装: DIRECTFET? SJ
包装: 带卷 (TR)
IRF6645
DirectFET ? Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6645). For 1000 parts on 7" reel,
order IRF6645TR1
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
IMPERIAL
METRIC
IMPERIAL
CODE
A
B
C
D
E
F
G
H
MIN
330.0
20.2
12.8
1.5
100.0
N.C
12.4
11.9
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
12.992
0.795
0.504
0.059
3.937
N.C
0.488
0.469
MAX
N.C
N.C
0.520
N.C
N.C
0.724
0.567
0.606
MIN
177.77
19.06
13.5
1.5
58.72
N.C
11.9
11.9
MAX
N.C
N.C
12.8
N.C
N.C
13.50
12.01
12.01
MIN
6.9
0.75
0.53
0.059
2.31
N.C
0.47
0.47
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
DIMENSIONS
NOTE: CONTROLLING
DIMENSIONS IN MM
MIN
7.90
METRIC
MAX
8.10
IMPERIAL
MAX
0.319
3.90
11.90
5.45
4.00
5.00
1.50
1.50
4.10
12.30
5.55
4.20
5.20
N.C
1.60
0.161
0.484
0.219
0.165
0.205
N.C
0.063
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information . 08/05
www.irf.com
9
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