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参数资料
| 型号： | IRF6613 |
| 厂商： | International Rectifier |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V DIRECTFET-MT |
| 标准包装： | 4,800 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 23A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.4 毫欧 @ 23A，10V |
| Id 时的 Vgs(th)（最大）： | 2.25V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 63nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 5950pF @ 15V |
| 功率 - 最大： | 2.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DirectFET? 等容 MT |
| 供应商设备封装： | DIRECTFET? MT |
| 包装： | 带卷 (TR) |
PD - 95881B
IRF6613
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Application Specific MOSFETs
Ideal for Synchronous Rectification in Isolated
DC-DC Converters
Low Conduction Losses
Low Switching Losses
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
V DSS
40V
HEXFET ? Power MOSFET
R DS(on) max Qg(typ.)
3.4m ? @V GS = 10V 42nC
4.1m ? @V GS = 4.5V
DirectFET ? ISOMETRIC
MT
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6613 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6613 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6613 has been optimized for parameters that are critical in synchronous buck converters including
Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613 offers particularly low Rds(on) and high Cdv/dt immunity for synchro-
nous FET applications .
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
V GS
I D @ T C = 25°C
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T C = 25°C
P D @T A = 25°C
P D @T A = 70°C
E AS
I AR
T J
T STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Linear Derating Factor
Operating Junction and
Storage Temperature Range
40
±20
150
23
18
180
89
2.8
1.8
200
18
0.022
-40 to + 150
V
A
W
mJ
A
W/°C
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JA
R θ JA
Junction-to-Ambient
Junction-to-Ambient
–––
12.5
45
–––
R θ JA
R θ JC
R θ J-PCB
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
20
–––
1.0
–––
1.4
–––
°C/W
Notes ? through ? are on page 2
www.irf.com
1
9/30/05
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF6613TR1 | 功能描述:MOSFET 40V N-CH HEXFET 3.4mOhms 42nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6613TR1PBF | 功能描述:MOSFET MOSFT 40V 150A 3.4mOhm 42nC Qg RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6613TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6613TRPBF | 功能描述:MOSFET 40V N-CH HEXFET 3.4mOhms 42nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6614 | 功能描述:MOSFET 40V 1 N-CH 5.9mOhm DirectFET 1.8Vgs RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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