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| 型号： | IRF6614TR1 |
| 厂商： | International Rectifier |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V DIRECTFET-ST |
| 产品变化通告： | (EP) Parts Discontinuation 25/May/2012 |
| 标准包装： | 1,000 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 12.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8.3 毫欧 @ 12.7A，10V |
| Id 时的 Vgs(th)（最大）： | 2.25V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 29nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2560pF @ 20V |
| 功率 - 最大： | 2.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DirectFET? 等容 ST |
| 供应商设备封装： | DIRECTFET? ST |
| 包装： | 带卷 (TR) |
PD -96907B
IRF6614
DirectFET ? Power MOSFET ?
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Application Specific MOSFETs
Lead and Bromide Free ?
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible ?
Ultra Low Package Inductance
Optimized for High Frequency Switching above 1MHz ?
Ideal for CPU Core and Telecom Synchronous
Rectification in DC-DC Converters
Typical values (unless otherwise specified)
V DSS V GS R DS(on) R DS(on)
40V max ±20V max 5.9m ? @ 10V 7.1m ? @ 4.5V
Q g tot Q gd Q gs2 Q rr Q oss V gs(th)
19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8V
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Optimized for Control FET socket of Sync. Buck Converter ?
Low Conduction Losses
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Compatible with existing Surface Mount Techniques ?
ST
DirectFET ? ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) ?
SQ SX
ST
MQ MX MT
Description
The IRF6614 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal
resistance by 80%.
The IRF6614 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest genera-
tion of processors operating at higher frequencies. The IRF6614 has been optimized for parameters that are critical in synchronous
buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socke t.
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
V GS
I D @ T A = 25°C
I D @ T A = 70°C
I D @ T C = 25°C
I DM
E AS
I AR
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
40
±20
12.7
10.1
55
102
22
10.2
V
A
mJ
A
20
16
12
I D = 12.7A
TJ = 125°C
12
10
8
6
ID= 10.2A
VDS = 32V
VDS= 20V
4
8
4
TJ = 25°C
2
0
2.0
4.0
6.0
8.0
10.0
0
10
20
30
40
50
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance Vs. Gate Voltage
Notes:
? Click on this section to link to the appropriate technical paper.
? Click on this section to link to the DirectFET Website.
? Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
? T C measured with thermocouple mounted to top (Drain) of part.
? Repetitive rating; pulse width limited by max. junction temperature.
? Starting T J = 25°C, L = 0.43mH, R G = 25 ? , I AS = 10.2A.
1
5/3/06
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相关代理商/技术参数 |
参数描述 |
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| IRF6614TR1PBF | 功能描述:MOSFET MOSFT 40V 55A 8.3mOhm 19nC Qg RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6614TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6614TRPBF | 功能描述:MOSFET 40V 1 N-CH 5.9mOhm DirectFET 1.8Vgs RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6616 | 功能描述:MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6616TR1 | 功能描述:MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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