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参数资料
| 型号： | IRF7341IPBF |
| 元件分类： | JFETs |
| 英文描述： | 4.7 A, 55 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SO-8, 8 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 138K |
| 代理商： | IRF7341IPBF |
IRF7341IPbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
V
VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
––– 0.059 –––
V/°C
Reference to 25°C, ID = 1mA
––– 0.043 0.050
VGS = 10V, ID = 4.7A
––– 0.056 0.065
VGS = 4.5V, ID = 3.8A
VGS(th)
Gate Threshold Voltage
1.0
–––
V
VDS = VGS, ID = 250A
gfs
Forward Transconductance
7.9
–––
S
VDS = 10V, ID = 4.5A
–––
2.0
VDS = 55V, VGS = 0V
–––
25
VDS = 55V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage
–––
-100
VGS = -20V
Gate-to-Source Reverse Leakage
–––
100
VGS = 20V
Qg
Total Gate Charge
–––
24
36
ID = 4.5A
Qgs
Gate-to-Source Charge
–––
2.3
3.4
nC
VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
7.0
10
VGS = 10V, See Fig. 10
td(on)
Turn-On Delay Time
–––
8.3
12
VDD = 28V
tr
Rise Time
–––
3.2
4.8
ID = 1.0A
td(off)
Turn-Off Delay Time
–––
32
48
RG = 6.0
tf
Fall Time
–––
13
20
RD = 16,
Ciss
Input Capacitance
–––
740
–––
VGS = 0V
Coss
Output Capacitance
–––
190
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
71
–––
= 1.0MHz, See Fig. 9
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
A
RDS(on)
StaticDrain-to-SourceOn-Resistance
IDSS
Drain-to-SourceLeakageCurrent
nA
ns
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
–––
1.2
V
TJ = 25°C, IS = 2.0A, VGS = 0V
trr
Reverse Recovery Time
–––
60
90
ns
TJ = 25°C, IF = 2.0A
Qrr
Reverse RecoveryCharge
–––
120
170
nC
di/dt = -100A/s
Source-Drain Ratings and Characteristics
38
2.0
A
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD ≤ 4.7A, di/dt ≤ 220A/s, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
Starting TJ = 25°C, L = 6.5mH
RG = 25, IAS = 4.7A. (See Figure 8)
Pulse width ≤ 300s; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
S
D
G
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7341ITRPBF | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 4.7A 8SOIC - Tape and Reel |
| IRF7341PBF | 功能描述:MOSFET 55V DUAL N-CH HEXFET 20V VGS -55V BVDSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7341Q | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 5.1A 8-Pin SOIC 制造商:International Rectifier 功能描述:MOSFET |
| IRF7341QPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7341QTR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R |
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