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参数资料
| 型号： | IRF7341IPBF |
| 元件分类： | JFETs |
| 英文描述： | 4.7 A, 55 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SO-8, 8 PIN |
| 文件页数： | 7/7页 |
| 文件大小： | 138K |
| 代理商： | IRF7341IPBF |
IRF7341IPbF
www.irf.com
7
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2006
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7341ITRPBF | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 4.7A 8SOIC - Tape and Reel |
| IRF7341PBF | 功能描述:MOSFET 55V DUAL N-CH HEXFET 20V VGS -55V BVDSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7341Q | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 5.1A 8-Pin SOIC 制造商:International Rectifier 功能描述:MOSFET |
| IRF7341QPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7341QTR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R |
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