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参数资料
| 型号： | IRFI644G |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | JFETs |
| 英文描述： | 7.9 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | PLASTIC, TO-220, FULLPAK-3 |
| 文件页数： | 1/8页 |
| 文件大小： | 1398K |
| 代理商： | IRFI644G |
Document Number: 91151
www.vishay.com
S-81290-Rev. A, 16-Jun-08
1
Power MOSFET
IRFI644G, SiHFI644G
Vishay Siliconix
FEATURES
Isolated Package
High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz)
Sink to Lead Creepage Distance = 4.8 mm
Dynamic dV/dt Rating
Low Thermal Resistance
Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
low
on-resistance
and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. The isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 15 mH, RG = 25 Ω, IAS = 7.9 A (see fig. 12).
c. ISD ≤ 7.9 A, dI/dt ≤ 150 A/s, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V)
250
RDS(on) (Ω)VGS = 10 V
0.28
Qg (Max.) (nC)
68
Qgs (nC)
11
Qgd (nC)
35
Configuration
Single
N-Channel MOSFET
G
D
S
D
G
TO-220 FULLPAK
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
TO-220 FULLPAK
Lead (Pb)-free
IRFI644GPbF
SiHFI644G-E3
SnPb
IRFI644G
SiHFI644G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
250
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
7.9
A
TC = 100 °C
5.0
Pulsed Drain Currenta
IDM
32
Linear Derating Factor
0.32
W/°C
Single Pulse Avalanche Energyb
EAS
600
mJ
Repetitive Avalanche Currenta
IAR
7.9
A
Repetitive Avalanche Energya
EAR
4.0
mJ
Maximum Power Dissipation
TC = 25 °C
PD
40
W
Peak Diode Recovery dV/dtc
dV/dt
4.8
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
Mounting Torque
6-32 or M3 screw
10
lbf in
1.1
N m
* Pb containing terminations are not RoHS compliant, exemptions may apply
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相关代理商/技术参数 |
参数描述 |
|---|---|
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| IRFI650B | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
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| IRFI654B | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET |
| IRFI654BTU_FP001 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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