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参数资料
| 型号： | IRFI644G |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | JFETs |
| 英文描述： | 7.9 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | PLASTIC, TO-220, FULLPAK-3 |
| 文件页数： | 2/8页 |
| 文件大小： | 1398K |
| 代理商： | IRFI644G |
www.vishay.com
Document Number: 91151
2
S-81290-Rev. A, 16-Jun-08
IRFI644G, SiHFI644G
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤ 300 s; duty cycle ≤ 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-65
°C/W
Maximum Junction-to-Case (Drain)
RthJC
-3.1
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 A
250
-
V
VDS Temperature Coefficient
ΔV
DS/TJ
Reference to 25 °C, ID = 1 mA
-
0.34
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 A
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 250 V, VGS = 0 V
-
25
A
VDS = 200 V, VGS = 0 V, TJ = 125 °C
-
250
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 4.7 Ab
-
0.28
Ω
Forward Transconductance
gfs
VDS = 50 V, ID = 4.7 Ab
6.0
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
1300
-
pF
Output Capacitance
Coss
-
330
-
Reverse Transfer Capacitance
Crss
-85
-
Drain to Sink Capacitance
C
f = 1.0 MHz
-
12
-
Total Gate Charge
Qg
VGS = 10 V
ID = 7.9 A, VDS = 200 V,
see fig. 6 and 13b
--
68
nC
Gate-Source Charge
Qgs
--
11
Gate-Drain Charge
Qgd
--
35
Turn-On Delay Time
td(on)
VDD = 125 V, ID = 7.9 A,
RG = 9.1 Ω, RD= 16 Ω,
see fig. 10b
-11
-
ns
Rise Time
tr
-24
-
Turn-Off Delay Time
td(off)
-53
-
Fall Time
tf
-24
-
Internal Drain Inductance
LD
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5
-
nH
Internal Source Inductance
LS
-7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
7.9
A
Pulsed Diode Forward Currenta
ISM
--
32
Body Diode Voltage
VSD
TJ = 25 °C, IS = 7.9 A, VGS = 0 Vb
--
1.8
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 7.9 A, dI/dt = 100 A/sb
-
250
500
ns
Body Diode Reverse Recovery Charge
Qrr
-2.3
4.6
C
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G
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