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参数资料
| 型号： | IRFI644G |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | JFETs |
| 英文描述： | 7.9 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | PLASTIC, TO-220, FULLPAK-3 |
| 文件页数： | 7/8页 |
| 文件大小： | 1398K |
| 代理商： | IRFI644G |
Document Number: 91151
www.vishay.com
S-81290-Rev. A, 16-Jun-08
7
IRFI644G, SiHFI644G
Vishay Siliconix
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91151.
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple
≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 V*
VDD
ISD
Driver gate drive
D.U.T. ISD waveform
D.U.T. VDS waveform
Inductor current
D =
P.W.
Period
+
-
+
-
* VGS = 5 V for logic level devices
Peak Diode Recovery dV/dt Test Circuit
VDD
dV/dt controlled by R
G
Driver same type as D.U.T.
ISD controlled by duty factor "D"
D.U.T. - device under test
D.U.T
Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
RG
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