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参数资料
| 型号： | IRFL214 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 790 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SOT-223, 4 PIN |
| 文件页数： | 1/9页 |
| 文件大小： | 925K |
| 代理商： | IRFL214 |
Document Number: 91194
www.vishay.com
S10-1257-Rev. C, 31-May-10
1
Power MOSFET
IRFL214, SiHFL214
Vishay Siliconix
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
Surface Mount
Available in Tape and Reel
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
low
on-resistance
and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performace
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
Note
a. See device orientation.
PRODUCT SUMMARY
VDS (V)
250
RDS(on) (Ω)VGS = 10 V
2.0
Qg (Max.) (nC)
8.2
Qgs (nC)
1.8
Qgd (nC)
4.5
Configuration
Single
N-Channel MOSFET
G
D
S
SOT-223
G
D
S
D
ORDERING INFORMATION
Package
SOT-223
Lead (Pb)-free and Halogen-free
SiHFL214-GE3
SiHFL214TR-GE3a
Lead (Pb)-free
IRFL214PbF
IRFL214TRPbFa
SiHFL214-E3
SiHFL214T-E3a
SnPb
IRFL214
IRFL214TRa
SiHFL214
SiHFL214Ta
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
250
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
0.79
A
TC = 100 °C
0.50
Pulsed Drain Currenta
IDM
6.3
Linear Derating Factor
0.025
W/°C
Linear Derating Factor (PCB Mount)e
0.017
Single Pulse Avalanche Energyb
EAS
50
mJ
Repetitive Avalanche Currenta
IAR
0.79
A
Repetitive Avalanche Energya
EAR
0.31
mJ
Maximum Power Dissipation
TC = 25 °C
PD
3.1
W
Maximum Power Dissipation (PCB Mount)e
TA = 25 °C
2.0
* Pb containing terminations are not RoHS compliant, exemptions may apply
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFL214PBF | 功能描述:MOSFET N-Chan 250V 0.79 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFL214TR | 功能描述:MOSFET N-Chan 250V 0.79 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFL214TRPBF | 功能描述:MOSFET N-Chan 250V 0.79 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFL218 | 制造商:International Rectifier 功能描述: |
| IRFL30N20D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 30A I(D) | TO-262 |
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