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参数资料
| 型号： | IRFL214 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 790 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SOT-223, 4 PIN |
| 文件页数： | 9/9页 |
| 文件大小： | 925K |
| 代理商： | IRFL214 |
Document Number: 91000
www.vishay.com
Revision: 11-Mar-11
1
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相关PDF资料 |
PDF描述 |
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| IRFP140 | 31 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC |
| IRFP152 | 34 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 |
| IRFR110TRR | 4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFL214PBF | 功能描述:MOSFET N-Chan 250V 0.79 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFL214TR | 功能描述:MOSFET N-Chan 250V 0.79 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFL214TRPBF | 功能描述:MOSFET N-Chan 250V 0.79 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFL218 | 制造商:International Rectifier 功能描述: |
| IRFL30N20D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 30A I(D) | TO-262 |
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