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参数资料
| 型号： | IRFL214 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 790 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SOT-223, 4 PIN |
| 文件页数： | 3/9页 |
| 文件大小： | 925K |
| 代理商： | IRFL214 |
Document Number: 91194
www.vishay.com
S10-1257-Rev. C, 31-May-10
3
IRFL214, SiHFL214
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤ 300 μs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
-
0.79
A
Pulsed Diode Forward Currenta
ISM
--
6.3
Body Diode Voltage
VSD
TJ = 25 °C, IS = 0.79 A, VGS = 0 Vb
--
2.0
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 2.7 A, dI/dt = 100 A/μsb
-
190
390
ns
Body Diode Reverse Recovery Charge
Qrr
-
0.64
1.3
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
S
D
G
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相关代理商/技术参数 |
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| IRFL214PBF | 功能描述:MOSFET N-Chan 250V 0.79 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFL214TR | 功能描述:MOSFET N-Chan 250V 0.79 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFL214TRPBF | 功能描述:MOSFET N-Chan 250V 0.79 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFL218 | 制造商:International Rectifier 功能描述: |
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