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参数资料
| 型号： | IRFL214 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 790 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SOT-223, 4 PIN |
| 文件页数： | 2/9页 |
| 文件大小： | 925K |
| 代理商： | IRFL214 |
www.vishay.com
Document Number: 91194
2
S10-1257-Rev. C, 31-May-10
IRFL214, SiHFL214
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 128 mH, Rg = 25 Ω, IAS = 0.79 A (see fig. 12).
c. ISD ≤ 2.7 A, dI/dt ≤ 65 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Peak Diode Recovery dV/dtc
dV/dt
4.8
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
--
60
°C/W
Maximum Junction-to-Case (Drain)
RthJC
--
40
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
250
-
V
VDS Temperature Coefficient
ΔV
DS/TJ
Reference to 25 °C, ID = 1 mA
-
0.39
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 250 V, VGS = 0 V
-
25
μA
VDS = 200 V, VGS = 0 V, TJ = 125 °C
-
250
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 0.47 Ab
--
2.0
Ω
Forward Transconductance
gfs
VDS = 50 V, ID = 0.47 A
0.50
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
140
-
pF
Output Capacitance
Coss
-42
-
Reverse Transfer Capacitance
Crss
-9.6
-
Total Gate Charge
Qg
VGS = 10 V
ID = 2.7 A, VDS = 200 V,
see fig. 6 and 13b
--
8.2
nC
Gate-Source Charge
Qgs
--
1.8
Gate-Drain Charge
Qgd
--
4.5
Turn-On Delay Time
td(on)
VDD = 125 V, ID = 2.7 A,
Rg = 24 Ω, RD = 45 Ω, see fig. 10b
-7.0
-
ns
Rise Time
tr
-7.6
-
Turn-Off Delay Time
td(off)
-16
-
Fall Time
tf
-7.0
-
Internal Drain Inductance
LD
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.0
-
nH
Internal Source Inductance
LS
-6.0
-
D
S
G
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