参数资料
型号: IRFL214
厂商: VISHAY SILICONIX
元件分类: 小信号晶体管
英文描述: 790 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: SOT-223, 4 PIN
文件页数: 7/9页
文件大小: 925K
代理商: IRFL214
Document Number: 91194
www.vishay.com
S10-1257-Rev. C, 31-May-10
7
IRFL214, SiHFL214
Vishay Siliconix
Fig.14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91194.
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple
≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
V
GS = 10 V
a
I
SD
Driver gate drive
D.U.T. l
SD waveform
D.U.T. V
DS waveform
Inductor current
D =
P.W.
Period
+
-
+
-
Peak Diode Recovery dV/dt Test Circuit
V
DD
dV/dt controlled by R
g
Driver same type as D.U.T.
I
SD controlled by duty factor “D”
D.U.T. - device under test
D.U.T.
Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
R
g
Note
a. V
GS = 5 V for logic level devices
V
DD
相关PDF资料
PDF描述
IRFM014AD84Z 2.8 A, 60 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
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相关代理商/技术参数
参数描述
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IRFL218 制造商:International Rectifier 功能描述:
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