参数资料
型号: IRFI644G
厂商: VISHAY SILICONIX
元件分类: JFETs
英文描述: 7.9 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: PLASTIC, TO-220, FULLPAK-3
文件页数: 5/8页
文件大小: 1398K
代理商: IRFI644G
Document Number: 91151
www.vishay.com
S-81290-Rev. A, 16-Jun-08
5
IRFI644G, SiHFI644G
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Pulse width
≤ 1 s
Duty factor
≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
R
G
IAS
0.01
Ω
tp
D.U.T
L
V
DS
+
-
V
DD
10 V
Vary tp to obtain
required IAS
IAS
VDS
VDD
VDS
tp
相关PDF资料
PDF描述
IRFL214 790 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
IRFM014AD84Z 2.8 A, 60 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFP054PBF 70 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
IRFP140 31 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
IRFP152 34 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218
相关代理商/技术参数
参数描述
IRFI644GPBF 功能描述:MOSFET N-Chan 250V 7.9 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFI650B 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET
IRFI650BTU_FP001 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFI654B 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET
IRFI654BTU_FP001 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube