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参数资料
| 型号： | IRF7341IPBF |
| 元件分类： | JFETs |
| 英文描述： | 4.7 A, 55 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SO-8, 8 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 138K |
| 代理商： | IRF7341IPBF |
IRF7341IPbF
4
www.irf.com
0
10
20
30
40
0.040
0.060
0.080
0.100
0.120
R
,
Drain-to-Source
On
Resistance
I
, Drain Current (A)
D
S
(
on)
VGS = 10V
VGS = 4.5V
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
(
)
R
DS(on)
,D
ra
in
-to
-S
ou
rc
eO
nR
es
is
ta
nc
e(
)
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R
,
Drain-to-Source
On
Resistance
(Normalized)
J
D
S
(on)
°
V
=
I =
GS
D
10V
4.7A
25
50
75
100
125
150
0
40
80
120
160
200
Starting T , Junction Temperature ( C)
E
,
Si
ngl
e
Pul
s
e
Aval
anche
Energy
(m
J)
J
AS
°
ID
TOP
BOTTOM
2.1A
3.8A
4.7A
0.04
0.06
0.08
0.10
0.12
02468
10
A
GS
V
, Gate-to-Source Voltage (V)
I
= 4.7A
D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7341ITRPBF | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 4.7A 8SOIC - Tape and Reel |
| IRF7341PBF | 功能描述:MOSFET 55V DUAL N-CH HEXFET 20V VGS -55V BVDSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7341Q | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 5.1A 8-Pin SOIC 制造商:International Rectifier 功能描述:MOSFET |
| IRF7341QPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7341QTR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R |
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