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| 型号： | IRF7484TRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 14A 8-SOIC |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 14A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 14A，7V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 100nC @ 7V |
| 输入电容 (Ciss) @ Vds： | 3520pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | IRF7484TRPBFDKR |
PD - 95281A
IRF7484PbF
Typical Applications
Industrial Motor Drive
HEXFET ? Power MOSFET
V DSS R DS(on) max (m W) I D
Benefits
l Advanced Process Technology
Ultra Low On-Resistance
l
Fast Switching
l
40V
10@V GS = 7.0V
14A
A
l
l
Repetitive Avalanche Allowed up to Tjmax.
Lead-Free
S
S
1
2
8
7
A
D
D
Description
This Stripe Planar design of HEXFET ? Power
S
3
6
D
MOSFETs utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET
are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an
extremely efficient and reliable device for use in a wide
variety of applications.
G
4
Top View
5
D
SO-8
Absolute Maximum Ratings
Parameter
Max.
Units
I D @ T A = 25°C
Continuous Drain Current, V GS @ 10V
14
I D @ T A = 70°C
I DM
P D @T A = 25°C
V GS
E AS
I AR
E AR
T J, T STG
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ?
Power Dissipation ?
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ?
Avalanche Current ?
Repetitive Avalanche Energy ?
Junction and Storage Temperature Range
11
110
2.5
0.02
± 8.0
230
See Fig.16c, 16d, 19, 20
-55 to + 150
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
R θ JL
R θ JA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient ?
Typ.
–––
–––
Max.
20
50
Units
°C/W
www.irf.com
1
09/22/10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7488 | 制造商:International Rectifier 功能描述:MOSFET N SO-8 |
| IRF7488HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 80V 6.3A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 80V 6.3A 8SOIC - Rail/Tube |
| IRF7488PBF | 制造商:International Rectifier 功能描述:MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 24 Milliohms;ID 6.3A;SO-8;PD 2.5W;VGS +/-20V 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 80V 6.3A 8PIN SO - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N SO-8 制造商:International Rectifier 功能描述:MOSFET, N, SO-8 制造商:International Rectifier 功能描述:MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.3A; Drain Source Voltage Vds:80V; On Resistance Rds(on):29mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; ;RoHS Compliant: Yes |
| IRF7488TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 80V 6.3A 8-Pin SOIC T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 80V 6.3A 8SOIC - Tape and Reel |
| IRF7488TRPBF | 功能描述:MOSFET MOSFT 80V 6.3A 29mOhm 38nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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